About RF Bipolar Transistors

Comchip RF Bipolar Transistors

RF bipolar transistors are electronic components used in high frequency applications, typically ranging from hundreds of megahertz up to several gigahertz. They are a type of bipolar junction transistor (BJT) that are specifically designed for use in radio frequency (RF) circuits. Unlike traditional BJTs, RF bipolar transistors are optimized to provide a low noise, high gain, and high frequency response. They are also able to handle greater power levels, making them suitable for use in RF power amplifiers.The construction of an RF bipolar transistor involves a heavily doped N-type or P-type semiconductor material sandwiched between two lightly doped layers. This creates two P-N junctions, allowing for the control of current flow through the transistor by varying the voltage applied to the base terminal. RF bipolar transistors are commonly used in various wireless communication systems, such as mobile phones, satellite communication, and radar systems. They are also utilized in RF switches, oscillators, and mixers.Overall, RF bipolar transistors are essential components in the world of electronics, enabling the transmission and reception of high frequency signals for various applications.
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Enter Qty SeriesTransistor TypeTechnologyTransistor PolarityOperating FrequencyDC Collector/Base Gain hFE MinCollector- Emitter Voltage VCEO MaxEmitter- Base Voltage VEBOContinuous Collector CurrentPd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureMounting StylePackage / CasePackagingConfigurationQualification
  
                     
MMBT2907A-G


RF Bipolar Transistors VCEO=60V IC=600mA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Comchip Availability : 49470
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USD 0.1205

Multiples of: 3000

Mmbt2907aBipolar PowerSiPnp200 MHz100- 60 V- 5 V- 600 mA250 mW- 55 C+ 150 CSmd/SmtSOT - 23 - 3ReelSingle 
MMBT2222A-G


RF Bipolar Transistors VCEO=40V IC=600mA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Comchip Availability : 17945
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USD 0.0345

Multiples of: 1

Mmbt2222aBipolar PowerSiNpn300 MHz4040 V6 V600 mA300 mW + 150 CSmd/SmtSOT - 23 - 3ReelSingle 
MMBT5401-G


Transistors RF Bipolar VCEO=-150V IC=-600mA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Comchip Availability : 8307
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USD 0.0525

Multiples of: 1

Mmbt5401Bipolar PowerSiliconPnp100 MHz80- 150 V- 5 V- 600 mA300 mW- 55 C+ 150 CSmd/SmtSOT - 23ReelSingle 
MMBT5551-G


RF Bipolar Transistors VCEO=160V IC=600mA
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Comchip Availability : 2977
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USD 0.0575

Multiples of: 1

Mmbt5551Bipolar PowerSi           Cut Tape  
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