About RF Bipolar Transistors

Toshiba RF Bipolar Transistors

RF bipolar transistors are electronic components used in high frequency applications, typically ranging from hundreds of megahertz up to several gigahertz. They are a type of bipolar junction transistor (BJT) that are specifically designed for use in radio frequency (RF) circuits. Unlike traditional BJTs, RF bipolar transistors are optimized to provide a low noise, high gain, and high frequency response. They are also able to handle greater power levels, making them suitable for use in RF power amplifiers.The construction of an RF bipolar transistor involves a heavily doped N-type or P-type semiconductor material sandwiched between two lightly doped layers. This creates two P-N junctions, allowing for the control of current flow through the transistor by varying the voltage applied to the base terminal. RF bipolar transistors are commonly used in various wireless communication systems, such as mobile phones, satellite communication, and radar systems. They are also utilized in RF switches, oscillators, and mixers.Overall, RF bipolar transistors are essential components in the world of electronics, enabling the transmission and reception of high frequency signals for various applications.

RF Bipolar Transistors

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(Ex. GST)(▲▼)		Enter Qty SeriesTransistor TypeTechnologyTransistor PolarityOperating FrequencyDC Collector/Base Gain hFE MinCollector- Emitter Voltage VCEO MaxEmitter- Base Voltage VEBOContinuous Collector CurrentPd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureMounting StylePackage / CasePackagingConfigurationQualification
  
                     
2SC2714-O(TE85L,F)


Transistors RF Bipolar RF Device FM band 30V Amp 23dB 100mW
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Toshiba 5785
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USD 0.0975
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2Sc2714BipolarSiliconNpn550 MHz (typ)4030 V4 V20 mA100 mW- 55 C+ 125 CSmd/SmtSC - 59 - 3ReelSingle 
MT3S111(TE85L,F)


RF Bipolar Transistors RF Bipolar Transistor .1A 700mW
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Toshiba 5730
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USD 0.2859
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Mt3s111BipolarSigeNpn11.5 GHz2006 V0.6 V100 mA700 mW + 150 CSmd/SmtTO - 236 - 3Cut TapeSingle 
MT3S113(TE85L,F)


RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
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Toshiba 4612
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USD 0.3475
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MT3S113TU,LF


RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
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Toshiba 2799
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USD 0.2835
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2SC5087R(TE85L,F)


Transistors RF Bipolar RF Device VHF/UHF 12V 150mW 13.5dB
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Toshiba 1006
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USD 0.1188
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2Sc5087BipolarSiliconNpn8 GHz (typ)12012 V3 V80 mA150 mW- 55 C+ 125 CSmd/SmtSMQ - 4ReelSingle 
MT3S16U(TE85L,F)


Transistors RF Bipolar RF 50mW 5.5dB 10V USM 60mA 2GHz
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Toshiba 0
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USD 0.0667
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Mt3s16BipolarSiliconNpn4 GHz (typ)805 V2 V60 mA100 mW- 55 C+ 125 CSmd/SmtSC - 70 - 3ReelSingle 
2SC5086-O,LF


RF Bipolar Transistors Radio-Frequency Bipolar Transistor
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Toshiba 0
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USD 0.0847
Multiples of: 3000

2Sc5086 SiNpn 8012 V3 V 100 mW- 55 C+ 125 CSmd/SmtSC - 75 - 3Cut TapeSingle 
2SC5066-O,LF


RF Bipolar Transistors Radio-Frequency Bipolar Transistor
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Toshiba 0
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USD 0.0891
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2Sc5066 SiNpn 80 At 10 Ma At 5 V12 V3 V 100 mW + 125 CSmd/SmtSOT - 416 - 3ReelSingle 
2SC5086-Y,LF


RF Bipolar Transistors Radio-Frequency Bipolar Transistor
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Toshiba 0
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USD 0.0891
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2Sc5086 SiNpn 8012 V3 V 100 mW- 55 C+ 125 CSmd/SmtSC - 75 - 3Cut TapeSingle 
2SC5086-Y(T5L,F,T)


Transistors RF Bipolar RF Device VHF/UHF 12V 100mW 11dB 7GHz
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Toshiba 0
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USD 0.0956
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2Sc5086BipolarSiliconNpn7 GHz (typ)8012 V3 V80 mA100 mW- 55 C+ 125 CSmd/SmtSSM - 3ReelSingle 
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