X-On Electronics has gained recognition as a prominent supplier of SE3455-002 infrared emitters - high power across the USA, India, Europe, Australia, and various other global locations. SE3455-002 infrared emitters - high power are a product manufactured by Honeywell. We provide cost-effective solutions for infrared emitters - high power, ensuring timely deliveries around the world.

SE3455-002 Honeywell

SE3455-002 electronic component of Honeywell
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Part No.SE3455-002
Manufacturer: Honeywell
Category:Infrared Emitters - High Power
Description: Infrared Emitters - High Power 90deg3.5mA,T0-46FltW 0.7 us Rise and Fall
Datasheet: SE3455-002 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - WHS 1

MOQ : 4
Multiples : 1
4 : USD 12.8553
10 : USD 7.9282
25 : USD 7.0307
50 : USD 6.5926
100 : USD 6.5071
250 : USD 6.3148
500 : USD 6.1439
1000 : USD 5.8661
N/A

0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 5.4543
N/A

0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 9.6125
10 : USD 6.948
100 : USD 5.904
500 : USD 5.256
1000 : USD 5.196
2500 : USD 5.196
5000 : USD 5.064
N/A

0 - WHS 4

MOQ : 14
Multiples : 1
14 : USD 5.79
70 : USD 5.5737
N/A

0 - WHS 5

MOQ : 7
Multiples : 1
7 : USD 6.1556
N/A

0 - WHS 6

MOQ : 8
Multiples : 1
8 : USD 6.09
200 : USD 5.6405
400 : USD 5.4085
N/A

   
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We are delighted to provide the SE3455-002 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SE3455-002 and other electronic components in the Infrared Emitters - High Power category and beyond.

SE3455/5455 GaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90 or 20 (nominal) beam angle option 935 nm wavelength Wide operating temperature range (55Cto+125C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE3455/5455 series consists of a gallium arsenide Tolerance 3 plc decimals 0.005(0.12) infrared emitting diode mounted in a TO-46 metal can 2 plc decimals 0.020(0.51) package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series SE3455 has glass lensed cans providing a narrow beam angle. 45 .188 (4.77) These devices are constructed with dual bond wires DIA178 (4.52) .046(1.17) suitable for pulsed current applications. The TO-46 .500 .036(.91) .219 (5.56) DIA. packages offer high power dissipation capability and are (12.70) .208 (5.28) MIN100(2.54)DIA ideally suited for operation in hostile environments. 1 NOM 2 .048(1.22) .160 (4.06) .028(.71) .015 DIA137 (3.48) (0.36) .018 DIA. (.460) .153 (3.89) LEADS: .140 (3.56) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005a.ds4 SE5455 .188 (4.77) 45 DIA178 (4.52) .046(1.17) .500 .036(.91) .219 (5.56) DIA. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .015 .160 (4.06) .028(.71) DIA. (0.36) .137 (3.48) .018 .200 DIA. (.460) 5.08 .247 (6.27) LEADS: .224 (5.89) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005b.ds4 Honeywell reserves the right to make changes in order to improve design and 28 h supply the best products possible.SE3455/5455 GaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Peak Forward Current 3 A (1s pulse width, 300 pps) Power Dissipation 150 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. Honeywell reserves the right to make changes in order to improve design and 29 h supply the best products possible.

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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