X-On Electronics has gained recognition as a prominent supplier of SE5470-002 infrared emitters - high power across the USA, India, Europe, Australia, and various other global locations. SE5470-002 infrared emitters - high power are a product manufactured by Honeywell. We provide cost-effective solutions for infrared emitters - high power, ensuring timely deliveries around the world.

SE5470-002

SE5470-002 electronic component of Honeywell
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See Product Specifications
Part No.SE5470-002
Manufacturer: Honeywell
Category:Infrared Emitters - High Power
Description: Infrared Emitters - High Power 20deg,T0-46 DomeLens 0.7 us Rise and Fall
Datasheet: SE5470-002 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 11.825 ea
Line Total: USD 59.12

Availability - 228
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
228 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5
Multiples : 1
5 : USD 11.825
25 : USD 9.6125
50 : USD 9.4625
100 : USD 9
300 : USD 8.2125
500 : USD 8.0875
1000 : USD 7.65
2500 : USD 7.2375

2988 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 10
Multiples : 1
10 : USD 8.632
50 : USD 8.476
100 : USD 7.995
1000 : USD 7.67

227 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 10
Multiples : 5
10 : USD 15.9922
25 : USD 12.6545
50 : USD 12.24
100 : USD 11.4426

     
Manufacturer
Product Category
Wavelength
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Lens Shape
Type
Cnhts
Hts Code
Lens Dimensions
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES TO-46 metal can package Choice of flat window or lensed package 90 or 20 (nominal) beam angle option 880 nm wavelength Higher output power than GaAs at equivalent drive currents Wide operating temperature range (55Cto+125C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger INFRA-83.TIF DESCRIPTION OUTLINE DIMENSIONS in inches (mm) The SE3470/5470 series consists of aluminum gallium Tolerance 3 plc decimals 0.005(0.12) arsenide infrared emitting diode mounted in a TO-46 2 plc decimals 0.020(0.51) metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 SE3470 series has glass lensed cans providing a narrow beam 45 .188 (4.77) angle. These devices typically exhibit 70% greater DIA178 (4.52) .046(1.17) power output than gallium arsenide devices at the same .500 .036(.91) .219 (5.56) DIA. forward current. The TO-46 packages offer high power (12.70) .208 (5.28) MIN100(2.54)DIA dissipation capability and are ideally suited for operation 1 NOM in hostile environments. 2 .048(1.22) .028(.71) .160 (4.06) DIA015 .137 (3.48) (0.36) .018 DIA. (.460) .153 (3.89) LEADS: .140 (3.56) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005a.ds4 SE5470 45 .188 (4.77) DIA178 (4.52) .046(1.17) .500 .036(.91) .219 (5.56) DIA. (12.70) .208 (5.28) MIN100(2.54)DIA 1 NOM 2 .048(1.22) .015 .160 (4.06) .028(.71) DIA. (0.36) .137 (3.48) .018 .200 DIA. (.460) 5.08 .247 (6.27) LEADS: .224 (5.89) 1. CATHODE (TAB) 2. ANODE (CASE) DIM 005b.ds4 Honeywell reserves the right to make changes in order to improve design and 32 h supply the best products possible.SE3470/5470 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC (25C Free-Air Temperature unless otherwise noted) Continuous Forward Current 100 mA Peak Forward Current 3 A (1s pulse width, 300 pps) Power Dissipation 150 mW Operating Temperature Range -55C to 125C Storage Temperature Range -65C to 150C Soldering Temperature (10 sec) 260C Notes 1. Derate linearly from 25C free-air temperature at the rate of 1.43 mW/C. Honeywell reserves the right to make changes in order to improve design and 33 h supply the best products possible.

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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