APT8024JLL 800V 29A 0.240 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses gUL Recognize along with exceptionally fast switching speeds inherent with APT s ISOTOP patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8024JLL UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 29 D C Amps 1 I Pulsed Drain Current 116 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts C 460 P D Linear Derating Factor W/C 3.68 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 29 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 14.5A) 0.240 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 800V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 640V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT8024JLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 4670 iss V = 0V GS C Output Capacitance V = 25V 860 oss pF DS f = 1 MHz C Reverse Transfer Capacitance 155 rss Q 3 Total Gate Charge V = 10V 160 g GS V = 400V Q DD Gate-Source Charge 24 nC gs I = 29A 25C D Q Gate-Drain Mille) Charge 105 gd RESISTIVE SWITCHING t Turn-on Delay Time 9 d(on) V = 15V GS t Rise Time 5 r V = 400V DD ns t I = 29A 25C 23 Turn-off Delay Time D d(off) R = 0.6 G t Fall Time 4 f INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 605 on V = 533V, V = 15V DD GS E I = 29A, R = 5 Turn-off Switching Energy 490 D G off J INDUCTIVE SWITCHING 125C E 6 975 Turn-on Switching Energy on V = 533V V = 15V DD GS E I = 29A, R = 5 Turn-off Switching Energy 585 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 29 Continuous Source Current (Body Diode) S Amps 1 I 116 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -29A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -29A, dl /dt = 100A/s) 850 ns rr S S Q Reverse Recovery Charge (I = -29A, dl /dt = 100A/s) 22 C rr S S dv dv 5 V/ns / Peak Diode Recovery / 10 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.27 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 5.95mH, R = 25, Peak I = 29A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 29A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 0.3 1 t 2 0.05 t 1 0.1 Duty Factor D = / t 2 Peak T = P x Z + T SINGLE PULSE J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7075 Rev B 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM