X-On Electronics has gained recognition as a prominent supplier of M25P40-VMP6GB nor flash across the USA, India, Europe, Australia, and various other global locations. M25P40-VMP6GB nor flash are a product manufactured by Micron. We provide cost-effective solutions for nor flash, ensuring timely deliveries around the world.

M25P40-VMP6GB Micron

M25P40-VMP6GB electronic component of Micron
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Part No.M25P40-VMP6GB
Manufacturer: Micron
Category:NOR Flash
Description: Flash Mem Serial-SPI 2.5V/3.3V 4M-Bit 512K x 8 8ns 8-Pin MLP EP Tube
Datasheet: M25P40-VMP6GB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

39: USD 0.8317 ea
Line Total: USD 32.44

Availability - 0
MOQ: 39  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun


Multiples : 2940

0 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 39
Multiples : 1
39 : USD 0.8317

     
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Supply Voltage - Max
Supply Current - Max
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Access Time Max
Address Bus
Boot Type
Cell Type
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Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
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We are delighted to provide the M25P40-VMP6GB from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M25P40-VMP6GB and other electronic components in the NOR Flash category and beyond.

TPS730xx www.ti.com SBVS054I NOVEMBER 2004 REVISED FEBRUARY 2011 LOW-NOISE, HIGH PSRR, RF 200-mA LOW-DROPOUT LINEAR REGULATORS Check for Samples: TPS730xx 1 FEATURES DESCRIPTION 234 200-mA RF Low-Dropout Regulator The TPS730xx family of low-dropout (LDO) With Enable low-power linear voltage regulators features high power-supply rejection ratio (PSRR), ultralow-noise, Available in Fixed Voltages from 1.8V to 3.3V fast start-up, and excellent line and load transient and Adjustable (1.22V to 5.5V) responses a small SOT23 package. NanoStar High PSRR (68dB at 100Hz) packaging gives an ultrasmall footprint as well as an Ultralow-Noise (33V , TPS73018) RMS ultralow profile and package weight, making it ideal for portable applications such as handsets and PDAs. Fast Start-Up Time (50s) Each device in the family is stable, with a small 2.2F Stable With a 2.2F Ceramic Capacitor ceramic capacitor on the output. The TPS730xx Excellent Load/Line Transient Response family uses an advanced, proprietary BiCMOS fabrication process to yield low dropout voltages (e.g., Very Low Dropout Voltage (120mV at 200mA) 120mV at 200mA, TPS73030). Each device achieves 5- and 6-Pin SOT23 (DBV), and Wafer Chip fast start-up times (approximately 50s with a Scale (YZQ) Packages 0.001F bypass capacitor) while consuming low quiescent current (170A typical). Moreover, when APPLICATIONS the device is placed in standby mode, the supply RF: VCOs, Receivers, ADCs current is reduced to less than 1A. The TPS73018 exhibits approximately 33V of output voltage Audio RMS noise at 1.8V output with a 0.01F bypass capacitor. Cellular and Cordless Telephones Applications with analog components that are Bluetooth , Wireless LAN noise-sensitive, such as portable RF electronics, Handheld Organizers, PDAs benefit from the high PSRR and low-noise features as well as the fast response time. DBV PACKAGE (TOP VIEW) TPS73028 TPS73028 IN 1 5 OUT RIPPLE REJECTION OUTPUT SPECTRAL NOISE DENSITY vs vs 2 GND FREQUENCY FREQUENCY 0.30 3 4 100 EN NR V = 3.8 V IN 90 I = 200 mA OUT Fixed Option C = 2.2 m F OUT 0.25 m C = 0.1 m F 80 NR DBV PACKAGE (TOP VIEW) 70 0.20 IN OUT 1 6 60 0.15 50 2 5 GND FB I = 1 mA OUT 40 I = 10 mA OUT 3 4 EN NR 0.10 30 I = 200 mA Adjustable Option OUT 20 V = 3.8 V 0.05 IN C = 10 m F YZQ PACKAGE 10 OUT C = 0.01 m F (TOP VIEW) NR 0 0 100 1 k 10 k 100 k 10 100 1 k 10 k 100 k 1 M 10 M IN OUT C3 C1 Frequency (Hz) Frequency (Hz) B2 NR A3 A1 GND EN Figure 1. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2NanoStar is a trademark of Texas Instruments. 3Bluetooth is a registered trademark of Bluetooth Sig, Inc. 4All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. 2004 2011, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Output Spectral Noise Density ( V/Hz) Ripple Rejection (dB)TPS730xx SBVS054I NOVEMBER 2004 REVISED FEBRUARY 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. (1) ORDERING INFORMATION PRODUCT V OUT TPS730xx yy yz XX is nominal output voltage (for example, 28 = 2.8V, 01 = Adjustable). YYY is package designator. Z is package quantity. (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the device product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) Over operating temperature range (unless otherwise noted). UNIT V range 0.3V to +6V IN V range 0.3V to +6V EN V range 0.3V to V + 0.3V OUT IN Peak output current Internally limited ESD rating, HBM 2kV ESD rating, CDM 500V Continuous total power dissipation See Dissipation Ratings Table Junction temperature range 40 C to +150 C Storage temperature range, T 65 C to +150 C stg (1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 2 Submit Documentation Feedback 2004 2011, Texas Instruments Incorporated

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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