M29W320ET70ZE6E Micron

M29W320ET M29W320EB 32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory Features Supply voltage V = 2.7V to 3.6V for Program, Erase and CC Read V =12V for Fast Program (optional) PP Access times: 70, 90ns Programming time TSOP48 (N) 12 x 20 mm 10s per byte/word typical Double word/ Quadruple byte Program FBGA BGA Memory Blocks Memory Array: 63 Main Blocks 8 Parameter Blocks (Top or Bottom TFBGA48 (ZE) FBGA64 (ZS) Location) 6 x 8 mm 11 x 13 mm Erase Suspend and Resume modes Read and Program another Block during Erase Suspend Unlock Bypass Program command Faster Production/Batch Programming V /WP pin for fast Program and Write Protect PP Temporary Block Unprotection mode Common Flash Interface 64 bit Security code Extended memory Block Extra block used as security block or to store additional information Low power consumption Standby and Automatic Standby 100,000 Program/Erase cycles per block Electronic signature Manufacturer code: 0020h Top Device code M29W320ET: 2256h Bottom Device code M29W320EB: 2257h RoHS packages available May 2009 Rev 9 1/65 www.numonyx.com 1Contents M29W320ET, M29W320EB Contents 1 Description . 7 2 Signal descriptions . 14 2.1 Address Inputs (A0-A20) . 14 2.2 Data Inputs/Outputs (DQ0-DQ7) . 14 2.3 Data Inputs/Outputs (DQ8-DQ14) 14 2.4 Data Input/Output or Address Input (DQ15A1) . 14 2.5 Chip Enable (E) 14 2.6 Output Enable (G) 14 2.7 Write Enable (W) . 15 2.8 V Write Protect (V WP) . 15 PP/ PP/ 2.9 Reset/Block Temporary Unprotect (RP) 15 2.10 Ready/Busy Output (RB) . 16 2.11 Byte/word Organization Select (BYTE) 16 2.12 V Supply voltage . 16 CC 2.13 V Ground . 16 SS 3 Bus operations 17 3.1 Bus Read . 17 3.2 Bus Write . 17 3.3 Output Disable . 17 3.4 Standby 17 3.5 Automatic Standby 18 3.6 Special bus operations . 18 3.6.1 Electronic signature 18 3.6.2 Block Protect and Chip Unprotect . 18 4 Command interface . 21 4.1 Read/Reset command . 21 4.2 Auto Select command . 21 4.3 Read CFI Query command . 22 4.4 Program command 22 2/65