HN2D02FUTW1T1G is a P-channel metal oxide semiconductor (MOSFET) device produced by ON Semiconductor. This part has an RDS(on) of 2.9kO and an ID of 0.2A, a VDS of -20V, and a max gate source voltage of +/- 16V. It also features extremely low gate charge, as well as low gate input capacitance, making it ideal for use in high-frequency and power applications.