SHN2D02FUTW1T1G ON Semiconductor

HN2D02FUTW1T1G, SHN2D02FUTW1T1G Ultra High Speed Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the HN2D02FUTW1T1G, SHN2D02FUTW1T1G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current I V = 30 V 0.1 Adc R R V = 80 V 0.5 R Forward Voltage V I = 100 mA 1.2 Vdc F F Reverse Breakdown Voltage V I = 100 A 80 Vdc R R Diode Capacitance C V = 0, f = 1.0 MHz 2.0 pF D R Reverse Recovery Time (Figure 1) t (Note 2) I = 10 mA, V = 6.0 V, 3.0 ns rr F R R = 100 , I = 0.1 I L rr R 2. t Test Circuit rr RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE t r t t p rr I F t 10% R L I = 0.1 I A rr R 90% I = 10 mA F V = 6 V R V t = 2 s R p R = 100 L t = 0.35 ns r Figure 1. Reverse Recovery Time Equivalent Test Circuit 100 10 T = 150C A T = 125C A 1.0 10 T = 85C T = 85C A A 0.1 T = 25C A 1.0 T = 55C A 0.01 T = - 40C A T = 25C A 0.1 0.001 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 0.64 0.60 0.56 0.52 0 24 6 8 V , REVERSE VOLTAGE (VOLTS) R Figure 4. Capacitance