Data Sheet AEC-Q101 Qualified Switching Diode DA204UFH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Ultra high speed switching 1.3 2.0 0.2 0.3 0.1 Each lead has same dimension 0.15 0.05 0.65 Features (3) 1) Small mold type. (UMD3) 2) High reliability 0.8MIN. 0 0.1 (2) (1) UMD3 0.65 0.65 1.3 0.1 0.7 0.1 Construction 0.9 0.1 Silicon epitaxial planar Structure (1)D2:C(2)D1:A ROHM : UMD3 JEDEC : SOT-323 (3)D1:CD2:A JEITA : SC-70 dot (year week factory) Taping dimensions (Unit : mm) 1.550.05 4.00.1 2.00.05 0.30.1 2.250.1 0.50.05 4.00.1 0 1.250.1 Absolute maximum ratings (Ta=25 C) Parameter Limits Symbol Unit V 20 Reverse voltage (repetitive peak) V RM Reverse voltage (DC) V 20 V R Forward current (Single) I 200 mA FM Average rectified forward current Io 100 mA I 300 Surge current (t=1us mA surge 200 Power dissipation Pd mW 150 Junction temperature Tj C Storage temperature Tstg 55 to 150 C Rated in slash put frequency 100 f MHz Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - - 1.0 V I =10mA F F Reverse current I V =15V - - 0.1 A R R Capacitence between terminals Ct - - 4.0 pF V =6V , f=1MHz R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.A 1/3 1 .25 0. 1 2.10.1 0.1Min 2.40.1 0.9MIN. 5.50.2 00.1 3.50.05 1.750.1 8.00.2 2.40.1 1.6Data Sheet DA204UFH Ta=150 Ta=125 100 100 100 D1 Ta=75 D2 10 Ta=125 Ta=75 Ta=75 D1 10 10 Ta=25 Ta=25 Ta=150 1 Ta=125 Ta=25 0.1 Ta= 25 Ta=150 1 1 Ta= 25 0.01 Ta=25 0.001 0.1 0.1 0 5 10 15 0 100 200 300 400 500 600 700 800 900 1000 0 100 200 300 400 500 600 700 800 900 1000 1100 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) FORWARD VOLTAGE : V (mV) F R F V -I CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS R R F F F F 10 10 100 Ta=150 f=1MHz f=1MHz D1 Ta=125 10 D2 Ta=75 1 1 1 Ta=25 0.1 Ta= 25 D2 0.01 0.001 0.1 0.1 0 5 10 15 0 5 10 15 05 10 15 REVERSE VOLTAGE : V (V) R REVERSE VOLTAGE : V (V) R REVERSE VOLTAGE : V (V) R V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R VR-Ct CHARACTERISTICS 1 730 870 Ta=25 Ta=25 D2 0.9 Ta=25 V =15V R I =10mA F I =10mA F 0.8 D1 720 D1 860 n=30pcs n=30pcs n=30pcs 0.7 0.6 710 850 0.5 840 700 0.4 AVE:0.1065nA 0.3 830 690 0.2 AVE:709.8mV AVE:849.7mV 0.1 820 680 0 V DISPERSION MAP V DISPERSION MAP F F I DISPERSION MAP R 10 5 10 Ta=25 Ta=25 Ta=25 9 9 D1 D2 D1 V =6V VR=15V V =6V R R 8 4 8 n=30pcs I =10mA f=1MHz F n=10pcs RL=100 7 7 Irr=0.1*I R 6 6 3 n=10pcs 5 5 4 2 4 AVE:1.85pF 3 3 AVE:0.620nA 2 1 2 1 1 AVE:1.20ns 0 0 0 I DISPERSION MAP Ct DISPERSION MAP trr DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.06 - Rev.A FORWARD CURRENT : I (mA) FORWARD VOLTAGE : V (mV) REVERSE CURRENT : I (nA) F REVERSE CURRENT : I (nA) F R R CAPACITANCE BETWEEN FORWARD VOLTAGE : V (mV) F CAPACITANCE BETWEEN FORWARD CURRENT : I (mA) F TERMINALS:Ct(pF) TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT : I (nA) R REVERSE CURRENT : I (nA) TERMINALS:Ct(pF) R