RLD85NZJ4-00A

850nm Invisible Single Mode Laser Diode RLD85NZJ4 Datasheet Application Outline view Motion sensor 3D depth sensor Etc. Merit Single mode 5.6 metal stem Absolute Maximum Ratings (Tc=25C) Parameter Symbol Ratings Unit Optical output Po 220 mW LD Vr 2 V Reverse voltage PIN PD Vr(PD) 20 V Operating temp. Top -10 to 60 C Storage temp. Tstg -40 to 85 C Characteristics (Tc=25C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Threshold current Ith 40 60 mA Operating current Iop Po=200mW mA 250 350 Operating voltage Vop Po=200mW 2.4 2.8 V 50mW/ Output efficiency W/A 0.7 0.95 1.5 (I(200mW)-I(150mW)) Monitor current Im Po=200mW, Vr(PD)=5V 0.1 0.4 1 mA // deg. 7 9.5 12 Beam divergence Po=200mW 13 19 23 deg. // deg. -3 0 +3 Beam tolerance Po=200mW -4 0 +4 deg. Emission point XYZ m -100 0 +100 accuracy Lasing wavelength Po=200mW 842 852 862 nm Caution: and // are defined as full width at half maximum. Operation temperature is regulated by case temperature Tc RLD85NZJ4 Datasheet lectrical Characteristics 25 40 50 60 220 220 200 200 5 I-L 180 180 160 160 4 140 140 120 120 3 100 100 80 80 2 I-V 60 60 40 40 1 20 20 0 0 0 0 0.2 0.4 0.6 0.8 1 0 5 0 1 00 1 50 2 00 2 50 3 00 Im mA IIff mmAA IIff mmAA OOOOppppttttiiiiccccaaaallll CCCChhhhaaaarrrraaaacccctttteeeerrrriiiissssttttiiiiccccssss 1 25 60 40 50 1 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0 0 84 5 85 0 85 5 86 0 86 5 87 0 -60 -40 -20 0 20 40 60 nnnnmmmm FFP deg. * This data is made from the result of having measured the sample extracted at random. Therefore, it is not what showed the ability of the whole product.