RSB6.8SMT2N

Data Sheet Bi direction ESD Protection Diode RSB6.8SM Applications Dimensions (Unit : mm) Land size figure (Unit : mm) ESD Protection 0.8 0.80.05 0.120.05 Features 1)Ultra small mold type. (EMD2) 2)Bi-directionality. 3)High reliability. 4)By chip-mounter,automatic mounting is possible. EMD2 Construction Structure 0.30.05 Silicon epitaxial planer 0.60.1 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) dot (productNo.) Taping dimensions (Unit : mm) Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Peak pulse power(tp=101000s) Ppk 10 W Power dissipation P 150 mW Junction temperature 150 Tj C Storage temperature Tstg 55 to +150 C Operation temperature range Topor 55 to +150 C Electrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 5.78 - 7.82 V I =1mA z Z I Reverse current - - 0.5 A V =3.5V R R Capacitance between terminals V =0V , f=1MHz Ct - 30.0 - pF R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/4 1.20.05 1.60.1 0.6 1.7Data Sheet RSB6.8SM 10 10 apply voltage apply voltage 1 1 Ta=125C 0.1 0.1 Ta=125C Ta=75C Ta=75C Ta=25C 0.01 0.01 Ta=25C Ta=25C Ta=25C 0.001 0.001 5 6 7 8 5 6 7 8 ZENER VOLTAGE:Vz(V) ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1) Vz-Iz CHARACTERISTICS(2) 1000 100 apply voltage apply voltage 100 10 10 Ta=125C 1 Ta=125C 1 0.1 0.1 Ta=75C 0.01 Ta=75C 0.01 Ta=25C 0.001 Ta=25C 0.001 0.0001 0.0001 0 1 2 3 4 5 0 1 2 3 REVERSE VOLTAGEV (V) REVERSE VOLTAGEV (V) R R V -I CHARACTERISTICS(1) V -I CHARACTERISTICS(2) R R R R 100 100 f=1MHz f=1MHz apply voltage apply voltage 10 10 0 1 2 3 4 5 0 1 2 3 4 5 REVERSE VOLTAGE:V (V) REVERSE VOLTAGE:V (V) R R V -Ct CHARACTERISTICS(1) V -Ct CHARACTERISTICS(2) R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) R ZENER CURRENT:Iz(mA) TERMINALS:Ct(pF) CAPACITANCE BETWEEN REVERSE CURRENT:I (nA) ZENER CURRENT:Iz(mA) R TERMINALS:Ct(pF)