X-On Electronics has gained recognition as a prominent supplier of SH8K4TB1 mosfet across the USA, India, Europe, Australia, and various other global locations. SH8K4TB1 mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SH8K4TB1 ROHM

SH8K4TB1 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.SH8K4TB1
Manufacturer: ROHM
Category:MOSFET
Description: ROHM Semiconductor MOSFET NchNch 30V 9A MOSFET
Datasheet: SH8K4TB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.7693 ea
Line Total: USD 2.77

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 14 Jun to Tue. 18 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.9465
5000 : USD 0.9407
10000 : USD 0.9085

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SH8K4TB1 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SH8K4TB1 and other electronic components in the MOSFET category and beyond.

4V Drive Nch+Nch MOSFET SH8K4 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Packaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) Package Taping Type Code TB Basic ordering unit (pieces) 2500 SH8K4 2 2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate Absolute maximum ratings (Ta=25C) 1 1 (3) Tr2 Source <It is the same ratings for the Tr1 and Tr2.> (4) Tr2 Gate (5) Tr2 Drain (1) (2) (3) (4) Parameter Symbol Limits Unit (6) Tr2 Drain (7) Tr1 Drain Drain-source voltage V 30 V 1 ESD PROTECTION DIODE DSS (8) Tr1 Drain 2 BODY DIODE Gate-source voltage VGSS 20 V A protection diode is included between the gate and Continuous ID 9.0 A the source terminals to protect the diode against static Drain current 1 electricity when the product is in use. Use the protection Pulsed IDP 36 A circuit when the fixed voltages are exceeded. Source current Continuous I 1.6 A S 1 (Body diode) Pulsed ISP 6.4 A 2 Total power dissipation PD 2 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 62.5 C / W MOUNTED ON A CERAMIC BOARD. www.rohm.com 2009.12 - Rev.A 1/3 c 2009 ROHM Co., Ltd. All rights reserved. SH8K4 Data Sheet Electrical characteristics (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS=20V, VDS=0V Drain-source breakdown voltage V 30 VI =1mA, V =0V (BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 2.5 V VDS=10V, ID=1mA 12 17 I =9.0A, V =10V D GS Static drain-source on-state RDS (on) 16 23 m ID=9.0A, VGS=4.5V resistance 17 24 ID=9.0A, VGS=4V Forward transfer admittance Y 7.0 SI =9.0A, V =10V fs D DS Input capacitance Ciss 1190 pF VDS=10V Output capacitance Coss 340 pF VGS=0V Reverse transfer capacitance C 190 pF f=1MHz rss Turn-on delay time td (on) 10 ns ID=4.5A, VDD 15V Rise time tr 15 ns VGS=10V Turn-off delay time t 55 ns R =3.33 d (off) L Fall time tf 22 ns RG =10 Total gate charge Qg 15 21 nC VDD 15V Gate-source charge Q 3.0 nC V =5V gs GS Gate-drain charge Qgd6.1 nC ID=9.0A Pulsed Body diode characteristics (Source-Drain) (Ta=25C) <It is the same characteristics for the Tr1 and Tr2.> Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=6.4A, VGS=0V Pulsed www.rohm.com 2009.12 - Rev.A 2/3 c 2009 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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