TN5050H-12WY Datasheet 50 A 1200 V automotive grade thyristor (SCR) Features A AEC-Q101 qualified G Blocking voltage: +/- 1200 V K On-state current: 50 A RMS TAB = A High static and dynamic commutation: dI/dt = 200 A/s dV/dt = 1000 V/s G A I = 50 mA GT K ECOPACK2 compliant component TO-247 uninsulated Applications Automotive applications: on board and off board battery charger Renewable energy inverters Solid state relay Overvoltage crowbar protection UPS (uninterruptible power supply) Bypass SSR / hybrid relay Inrush current limiter in battery charger AC-DC voltage controlled rectifier Product status Industrial welding systems TN5050H-12WY Description Product summary Available in TO-247 high power package, the TN5050H-12WY autograde is suitable I 50 A T(RMS) in applications such as automotive / stationary battery charger, renewable energy V /V 1200 V generator, interruptible power supply, solid state relay, welding equipment and motor DRM RRM drive applications. V /V 1300 V DSM RSM Its power switching, voltage robustness and power dissipation performances are the I 50 mA GT key features for functions such as a 80 A AC switch, an AC phasing inverter and an AC-DC controlled rectifier bridge. T 150 C j The TN5050H-12WY is an automotive grade product and offers a superior performance in surge current handling, thermal cooling capabilities and overvoltage robustness. DS10561 - Rev 5 - February 2020 www.st.com For further information contact your local STMicroelectronics sales office.TN5050H-12WY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 conduction angle) 50 T(RMS) T = 137 C A C I Average on-state current (180 conduction angle) 32 T(AV) I RMS on-state current (180 conduction angle) 80 T(RMS) T = 125 C A C I Average on-state current (180 conduction angle) 51 T(AV) t = 8.3 ms 633 p (1) I Non repetitive surge peak on-state current, V = 0 V T initial = 25 C A TSM R j t = 10 ms 580 p V / V Repetitive off-state voltage (50-60 Hz) T = 150 C 1200 V DRM RRM j I = 2 x I , tr 100 ns G GT T = 150 C dl/dt f = 50 Hz 200 A/s j Critical rate of rise of on-state current I Peak forward gate current t = 20 s T = 150 C 8 A GM p j P Average gate power dissipation T = 150 C 1 W G(AV) j T stg Storage junction temperature range -40 to +150 C T Operating junction temperature -40 to +150 C j 1. ST recommend It value for fusing = 1680 As for T = 25 C and t = 10 ms j P Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Test Conditions Value Unit Min. 10 I V = 12 V, R = 33 GT D L mA Max. 50 V V = 12 V, R = 33 Max. 1 V GT D L V V = 2/3 x V , R = 3.3 k T = 150 C Min. 0.15 V GD D DRM L j I I = 500 mA, gate open Max. 100 mA H T I I = 1.2 x I Max. 125 mA L G GT t I = 50 A , V = V , I = 200 mA, dI /dt = 0.2 A/s Typ. 3 s gt T D DRM G G V = 2/3 x V , gate open T = 150 C dV/dt Min. 1000 V/s D DRM j I = 33 A, dI /dt = 10 A/s, V = 75 V, T T R t T = 150 C Typ. 150 s q j V = 800 V, dV /dt = 20 V/s, t = 100 s D D P V I = 100 A, t = 380 s Max. 1.55 V TM TM P V T = 150 C On-state threshold voltage Max. 0.88 V TO j R T = 150 C On-state dynamic resistance Max. 6 m D j T = 25 C Max. 5 A j I /I V = V , V = V T = 125 C Max. 3 mA DRM RRM D DRM R RRM j T = 150 C Max. 7.5 mA j I /I V = V , V = V T = 25 C DSM RSM D DSM R RSM j Max. 10 A DS10561 - Rev 5 page 2/10