X-On Electronics has gained recognition as a prominent supplier of JDH2S01FSTPL3 schottky diodes & rectifiers across the USA, India, Europe, Australia, and various other global locations. JDH2S01FSTPL3 schottky diodes & rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for schottky diodes & rectifiers, ensuring timely deliveries around the world.

JDH2S01FSTPL3 Toshiba

JDH2S01FSTPL3 electronic component of Toshiba
Images are for reference only
See Product Specifications
Part No.JDH2S01FSTPL3
Manufacturer: Toshiba
Category:Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers High Freq Schottky 0.03A 5V VRM 0.6pF
Datasheet: JDH2S01FSTPL3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.91
10 : USD 0.6631
100 : USD 0.3756
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.6355
10 : USD 0.4882
100 : USD 0.2182
500 : USD 0.145
1000 : USD 0.1123
2500 : USD 0.0908
10000 : USD 0.0788
20000 : USD 0.074
50000 : USD 0.0691
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the JDH2S01FSTPL3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JDH2S01FSTPL3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

JDH2S01FS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH2S01FS UHF Band Mixer Unit: mm Suitable for reducing set size through the use of a two-pin small package 0.60.05 supporting high-density mounting A Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 0.2 0.10.05 0.05 0.07 M A Maximum (peak) reverse voltage V 4 V R Forward current I 25 mA F +0.02 0.48 -0.03 Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 1-1L1A Please design the appropriate reliability upon reviewing the Weight: 0.0006 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 2 mA 0.25 V F F Forward current I V = 0.5 V 25 mA F F Reverse current I V = 0.5 V 25 A R R Capacitance C V = 0.2 V, f = 1 MHz 0.6 pF T R Note: Signal level when capacitance is measured: V = 20 mV sig rms Marking Z Caution This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with the product should be made of antistatic materials. Start of commercial production 2004-10 2005-2017 1 2017-08-03 Toshiba Electronic Devices & Storage Corporation 0.1 0.80.05 0.1 1.00.05JDH2S01FS - VF 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF( V) -VR 1.E+00 1.E-01 C 1.E-02 1.E-03 I R (A) 1.E-04 1.E-05 1.E-06 1.E-07 0 1 2 3 4 5 6 VR (V) 2005-2017 2 2017-08-03 Toshiba Electronic Devices & Storage Corporation IF( A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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