BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS Designed for Complementary Use with BD646, BD648, BD650 and BD652 TO-220 PACKAGE (TOP VIEW) 62.5 W at 25C Case Temperature 8 A Continuous Collector Current 1 B Minimum h of 750 at 3 V, 3 A FE C 2 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BD645 80 BD647 100 Collector-base voltage (I = 0) V V E CBO BD649 120 BD651 140 BD645 60 BD647 80 Collector-emitter voltage (I = 0) V V B CEO BD649 100 BD651 120 Emitter-base voltage V 5V EBO Continuous collector current I 8A C Peak collector current (see Note 1) I 12 A CM Continuous base current I 0.3 A B Continuous device dissipation at (or below) 25C case temperature (see Note 2) P 62.5 W tot Continuous device dissipation at (or below) 25C free air temperature (see Note 3) P 2W tot 2 Unclamped inductive load energy (see Note 4) LI 50 mJ C Operating junction temperature range T -65 to +150 C j Storage temperature range T -65 to +150 C stg Lead temperature 3.2 mm from case for 10 seconds T 260 C L NOTES: 1. This value applies for t 0.3 ms, duty cycle 10%. p 2. Derate linearly to 150C case temperature at the rate of 0.4 W/C. 3. Derate linearly to 150C free air temperature at the rate of 16 mW/C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I = 5 mA, R = 100 , B(on) BE V = 0, R = 0.1 , V = 20 V. BE(off) S CC MAY 1993 - REVISED SEPTEMBER 2002 1 Specifications are subject to change without notice.BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT BD645 60 Collector-emitter BD647 80 V I = 30 mA I = 0 (see Note 5) V (BR)CEO C B breakdown voltage BD649 100 BD651 120 V = 30 V I =0 BD645 0.5 CE B Collector-emitter V = 40 V I =0 BD647 0.5 CE B I mA CEO cut-off current V = 50 V I =0 BD649 0.5 CE B V = 60 V I =0 BD651 0.5 CE B V = 60 V I =0 BD645 0.2 CB E V = 80 V I =0 BD647 0.2 CB E V = 100 V I =0 BD649 0.2 CB E Collector cut-off V = 120 V I =0 BD651 0.2 CB E I mA CBO current V = 40 V I =0 T = 150C BD645 2.0 CB E C V = 50 V I =0 T = 150C BD647 2.0 CB E C V = 60 V I =0 T = 150C BD649 2.0 CB E C V = 70 V I =0 T = 150C BD651 2.0 CB E C Emitter cut-off I V = 5 V I = 0 (see Notes 5 and 6) 5 mA EBO EB C current Forward current h V = 3 V I = 3 A (see Notes 5 and 6) 750 FE CE C transfer ratio Collector-emitter I = 12 mA I = 3 A 2 B C V (see Notes 5 and 6) V CE(sat) saturation voltage I = 50 mA I = 5 A 2.5 B C Base-emitter V I = 50 mA I = 5 A (see Notes 5 and 6) 3 V BE(sat) B C saturation voltage Base-emitter V V = 3 V I = 3 A (see Notes 5 and 6) 2.5 V BE(on) CE C voltage NOTES: 5. These parameters must be measured using pulse techniques, t = 300 s, duty cycle 2%. p 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN TYP MAX UNIT R Junction to case thermal resistance 2.0 C/W JC R Junction to free air thermal resistance 62.5 C/W JA MAY 1993 - REVISED SEPTEMBER 2002 2 Specifications are subject to change without notice.