TEMD5110X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES Package type: surface mount Package form: top view Dimensions (L x W x H in mm): 5 x 4.24 x 1.12 2 Radiant sensitive area (in mm ): 7.5 AEC-Q101 qualified High radiant sensitivity Daylight blocking filter matched with 870 to 950 nm emitters Fast response times 20535 1 Angle of half sensitivity: = 65 Floor life: 72 h, MSL 4, acc. J-STD-020 Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Note ** Please see document Vishay Material Category Policy: TEMD5110X01 is a high speed and high sensitive PIN www.vishay.com/doc 99902 photodiode. It is a miniature surface mount device (SMD) 2 including the chip with a 7.5 mm sensitive area and a APPLICATIONS daylight blocking filter matched with IR emitters operating at High speed detector for infrared radiation wavelength 870 nm or 950 nm. Infrared remote control and free air data transmissionsystems, e.g. in combination with TSFFxxxx series IR emitters PRODUCT SUMMARY COMPONENT I (A) (deg) (nm) ra 0.5 TEMD5110X01 55 65 790 to 1050 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TEMD5110X01 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Top view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 60 V R Power dissipation T 25 C P 215 mW amb V Junction temperature T 100 C j Operating temperature range T - 40 to + 100 C amb Storage temperature range T - 40 to + 110 C stg Soldering temperature Acc. reflow sloder profile fig. 8 T 260 C sd Thermal resistance junction/ambient R 350 K/W thJA Rev. 1.6, 23-Aug-11 Document Number: 84658 1 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 TEMD5110X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 50 mA V 11.3 V F F Breakdown voltage I = 100 A, E = 0 V 60 V R (BR) Reverse dark current V = 10 V, E = 0 I 230 nA R ro V = 0 V, f = 1 MHz, E = 0 C 70 pF R D Diode capacitance V = 3 V, f = 1 MHz, E = 0 C 25 40 pF R D 2 Open circuit voltage E = 1 mW/cm , = 950 nm V 350 mV e o 2 Temperature coefficient of V E = 1 mW/cm , = 950 nm TK - 2.6 mV/K o e Vo 2 Short circuit current E = 1 mW/cm , = 950 nm I 50 A e k 2 Temperature coefficient of I E = 1 mW/cm , = 950 nm TK 0.1 %/K k e Ik 2 E = 1 mW/cm , = 950 nm, e Reverse light current I 45 55 A ra V = 5 V R Angle of half sensitivity 65 deg Wavelength of peak sensitivity 940 nm p Range of spectral bandwidth 790 to 1050 nm 0.5 -14 Noise equivalent power V = 10 V, = 950 nm NEP 4 x 10 W/Hz R V = 10 V, R = 1 k, R L Rise time t 100 ns r = 820 nm V = 10 V, R = 1 k, R L Fall time t 100 ns f = 820 nm BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.4 V =5V R 1.2 = 950 nm 100 1.0 10 0.8 V = 10 V R 0.6 1 20 40 60 80 100 0 20 40 60 80 100 94 8403 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8409 amb amb Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.6, 23-Aug-11 Document Number: 84658 2 For technical questions, contact: detectortechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Relative Reverse Light Current ra rel I - Reverse Dark Current (nA) ro