About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
GN2470K4-G


IGBT Transistors 700V 3.5A IGBT
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Microchip 7211
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USD 1.1246
Multiples of: 500

Single700 V +/- 20 V    TO - 252 (DPAK) - 3ReelSiSmd/Smt2.5 W- 55 C+ 150 C 
APT25GT120BRG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip 3849
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USD 6.6
Multiples of: 1

Single1.2 kV3.2 V30 V54 A120 nA  TO - 247 - 3TubeSiThrough Hole347 W- 55 C+ 150 C 
APT50GP60B2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 805
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USD 14.4398
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      625 W   POWER MOS 7®, PT     
APT30GP60BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip 683
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USD 8.7209
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      463 W   POWER MOS 7®, PT     
APT50GN60BDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip 622
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USD 7.2851
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Single600 V1.5 V30 V107 A600 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
APT75GN120LG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 498
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USD 16.3975
Multiples of: 1

Single1.2 kV1.7 V30 V200 A600 nA  TO - 264 - 3TubeSiThrough Hole833 W- 55 C+ 150 C 
APT25GN120SG


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Single
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Microchip 476
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USD 7.659
Multiples of: 1

Single1.2 kV1.7 V30 V67 A600 nA  D3PAK - 3TubeSiSmd/Smt272 W- 55 C+ 150 C 
APT30GS60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
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Microchip 213
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USD 7.368
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         TubeSi     
APT50GN120L2DQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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Microchip 152
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USD 18.0112
Multiples of: 1

Single1.2 kV1.7 V30 V134 A600 nA  TO - 264 - 3TubeSiThrough Hole543 W- 55 C+ 150 C 
APT80GA90LD40


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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Microchip 145
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USD 14.6296
Multiples of: 1

      625 W   POWER MOS 8®, PT     
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