About MOSFET

Diodes Incorporated MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated 5176890
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USD 0.0161
Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
DMN10H120SFG-13


Diodes Incorporated MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
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Diodes Incorporated 2479320
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USD 0.2774
Multiples of: 3000

3.8 A100 V68 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Tape And ReelSi1 Channel20 V10.6 nCEnhancement  
DMN53D0LDW-7


MOSFET N-Ch 50Vds 20Vgs FET Enh Mode 46pF 1.5Vgs
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Diodes Incorporated 1600500
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USD 0.0448
Multiples of: 3000

360 mA50 V1.6 OhmsN - Channel 800 mV- 55 C+ 150 C310 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel10 V0.6 nC , 0.6 nCEnhancement  
2N7002AQ-13


MOSFET 2N7002 Family
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Diodes Incorporated 1561700
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USD 0.0376
Multiples of: 10000

180 mA60 V3 OhmsN - Channel 1.2 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V EnhancementAec - Q101 
DMN2400UV-7


MOSFET MOSFET,N-CHANNEL
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Diodes Incorporated 1204740
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USD 0.0699
Multiples of: 3000

1.33 A20 V480 mOhmsN - Channel 500 mV- 55 C+ 150 C530 mWSmd/SmtSOT - 563 - 6Cut TapeSi2 Channel5 V0.5 nCEnhancement  
DMTH4005SPSQ-13


MOSFET 40V 175c N-Ch FET 3.7mOHm 10V 100A
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Diodes Incorporated 1071850
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USD 0.6094
Multiples of: 2500

20.9 A40 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C150 WSmd/SmtPowerdi5060 - 8ReelSi1 Channel+/- 20 V49.1 nCEnhancementAec - Q101 
DMC31D5UDJ-7


MOSFET 30V N & P Enh FET Low RDSon 22.2pF
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Diodes Incorporated 1057300
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USD 0.1535
Multiples of: 10000

220 mA , - 200 mA30 V2.3 Ohms , 5.1 OhmsN And P - Channel12 V1 V- 55 C+ 150 C350 mWSmd/SmtSOT - 963 - 6ReelSi2 Channel12 V0.38 nC , 0.35 nCEnhancement  
DMC2038LVTQ-7


Transistor: N/P-MOSFET; unipolar; complementary; 20/-20V; 3/-2.1A
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Diodes Incorporated 1033050
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USD 0.1278
Multiples of: 3000

                   
2N7002DW-7-F


60V 230mA 7.5O@5V,50mA 310mW 2 N-Channel SOT-363 MOSFETs ROHS
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Diodes Incorporated 771150
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USD 0.0266
Multiples of: 3000

230 mA70 V7.5 OhmsN - Channel 1 V- 55 C+ 150 C0.4 WSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel5 V Enhancement  
2N7002W-7-F


N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-323
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Diodes Incorporated 2793
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USD 0.0213
Multiples of: 20

115 mA60 V13.5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V Enhancement  
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