About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
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MOSFET OptiMOS2 PWR TRANS 20V 80A
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Infineon 2910000
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USD 0.3606
Multiples of: 5000

19 A20 V4.6 mOhmsN - Channel  - 55 C+ 150 C2.8 WSmd/SmtTDSONReelSi1 Channel12 V Enhancement Optimos
BSS84PH6327XTSA2


Transistor: P-MOSFET; unipolar; -60V; -0.17A; 0.36W; SOT23
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Infineon 1553940
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USD 0.0362
Multiples of: 3000

   P Channel               
BSC047N08NS3G


MOSFET N Channel 80V 18A 3.5V @ 90uA 4.7mO @ 50A,10V PG-TDSON-8 RoHS
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Infineon 1455000
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USD 0.8847
Multiples of: 5000

                   
BSS123NH6433XTMA1


N-Channel 100 V 190mA (Ta) 500mW (Ta) Surface Mount PG-SOT23
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Infineon 873000
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USD 0.0458
Multiples of: 10000

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23ReelSi1 Channel20 V900 pCEnhancement  
IRLML6244TRPBF


MOSFET N Trench 20V 6.3A 1.1V @ 10uA 21 mΩ @ 6.3A,4.5V SOT-23 (SOT-23-3) RoHS
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Infineon 800250
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USD 0.0799
Multiples of: 3000

            Hexfet®      
BSS123N H6327


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon 797717
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USD 0.0522
Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 1.9 V- 55 C+ 150 C500 mWSmd/SmtPG - SOT23Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
IPB039N10N3 G


MOSFET N-Channel MOSFET 20-200V
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Infineon 630500
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USD 1.598
Multiples of: 1000

160 A100 V3.9 mOhmsN - Channel 2 V- 55 C+ 175 C214 WSmd/SmtTO - 263 - 7ReelSi1 Channel10 V88 nCEnhancement Optimos
SPD15P10PLGBTMA1


Infineon Technologies MOSFET P-Ch -100V 15A DPAK-2
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Infineon 589275
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USD 0.8551
Multiples of: 2500

15 A100 V200 mOhmsP - Channel 2 V- 55 C+ 175 C128 WSmd/SmtPG - TO - 252 - 3ReelSi1 Channel10 V47 nCEnhancement  
BSS316NH6327XTSA1


Infineon Technologies MOSFET N-Ch 30V 1.4A SOT-23-3
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Infineon 552900
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USD 0.0419
Multiples of: 3000

1.4 A30 V119 mOhmsN - Channel 1.6 V- 55 C+ 150 C500 mWSmd/SmtSOT - 23 - 3Reel-1 Channel+/- 20 V600 pCEnhancementAec - Q101 
BSS84PW H6327


Infineon Technologies MOSFET P-Ch -60V 150mA SOT-323-3
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Infineon 539298
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USD 0.0415
Multiples of: 1

- 150 mA- 60 V8 OhmsP - Channel+/- 20 V- 1.5 V- 55 C+ 150 C300 mWSmd/SmtPG - SOT - 323Reel-1 Channel20 V1 nCEnhancementAec - Q101 
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