CBRHDSH1-100 TR13 Central Semiconductor

CBRHDSH1-100 SURFACE MOUNT www.centralsemi.com HIGH DENSITY DESCRIPTION: 1 AMP SILICON The CENTRAL SEMICONDUCTOR CBRHDSH1-100 SCHOTTKY BRIDGE RECTIFIER is a full wave bridge rectifier in a durable epoxy surface mount molded case, designed for low voltage full wave rectification applications. The molding compound used in this device has UL flammability classification 94V-O. MARKING CODE: CSH110 FEATURES: Low Leakage Current (40nA TYP V ) RRM Low Forward Voltage Drop Schottky Diodes HD DIP CASE High 1.0A Current Rating MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Peak Repetitive Reverse Voltage V 100 V RRM DC Blocking Voltage V 100 V R RMS Reverse Voltage V 71 V R(RMS) Average Forward Current I 1.0 A O Peak Forward Surge Current I 20 A FSM Power Dissipation P 1.2 W D Operating Junction Temperature T -50 to +125 C J Storage Temperature T -55 to +150 C stg Thermal Resistance 85 C/W JA ELECTRICAL CHARACTERISTICS PER DIODE: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=100V 0.04 10 A R R I V =100V, T=50C 1.0 mA R R A I V =100V, T=100C 20 mA R R A BV I =150A 100 V R R V I =500mA 615 700 mV F F V I =1.0A 690 750 mV F F C V =4.0V, f=1.0MHz 230 pF J R R6 (22-May 2012)CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUTLINE MARKING CODE: CSH110 R6 (22-May 2012) www.centralsemi.com