GD10MPS17H TM 1700V 10A SiC Schoktt y MPS Diode Silicon Carbide Schoktt y Diode V = 1700 V RRM IF (T = 160C) = 10 A C Q = 83 nC C Features Package Gen4 Thin Chip Technology for Low V F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F Low Thermal Resistance RoHS Low Reverse Leakage Current Temperature Independent Fast Switching Positi ve Temperature Coe c ient of V F Low V for High Temperature Opera tion F TO-247-2 REACH K A Advantages Applicaoti ns Improved System E c iency EV Fast Chargers High System Reliability Solar Inverters Op timal Price Performance An ti-Parallel / Free-Wheeling Diode Reduced Cooling Requirements Motor Drives Increased System Power Density High Frequency Rec ti ers Zero Reverse Recovery Current Switched Mode Power Supply (SMPS) Easy to Parallel without Thermal Runaway Induction Heating and Welding Improved System E c iency Pulsed Power Absolute Maximum Rangti s (At T = 25C Unless Otherwise Stated) C Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1700 V RRM TC = 100C, D = 1 26 Continuous Forward Current IF TC = 135C, D = 1 18 A Fig. 4 T = 160C, D = 1 10 C T = 25C, t = 10 ms 100 Non-Repetitive Peak Forward Surge Current, Half Sine C P IF,SM A Wave T = 150C, t = 10 ms 80 C P TC = 25C, tP = 10 ms 60 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 42 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 500 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 50 A s C P Non-Repetitive Avalanche Energy EAS L = 4 mH, IAS = 10 A 200 mJ Diode Ruggedness dV/dt V = 0 ~ 1360 V 200 V/ns R Power Dissipation P T = 25C 218 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD10MPS17H/GD10MPS17H.pdf Page 1 of 7GD10MPS17H TM 1700V 10A SiC Schoktt y MPS Diode Electrical Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 10 A, T = 25C 1.5 1.8 F j Diode Forward Voltage V V Fig. 1 F I = 10 A, T = 175C 2.1 F j V = 1700 V, T = 25C 1 20 R j Reverse Current I A Fig. 2 R V = 1700 V, T = 175C 7 R j VR = 600 V 56 Total Capacitive Charge Q nC Fig. 7 C VR = 1200 V 83 IF IF,MAX dI /dt = 200 A/s F V = 600 V R Switching Time tS < 10 ns V = 1200 V R VR = 1 V, f = 1MHz 721 Total Capacitance C pF Fig. 6 VR = 1200 V, f = 1MHz 40 Thermal/Package Characteriscti s Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case RthJC 0.69 C/W Fig. 9 Weight W 6.0 g T Mounting Torque T Screws to Heatsink 1.1 Nm M Rev 21/Jun Latest Version at: www.genesicsemi.com/sic-schottky-mps/GD10MPS17H/GD10MPS17H.pdf Page 2 of 7