DDB2U50N08W1R B23 EasyBRIDGE Modul mit CoolMOS und PressFIT EasyBRIDGE module with CoolMOS and PressFIT V = 600V DSS I = 50A / I = 100A D nom DRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary inverters Induktives Erwrmen und Schweien Inductive heating and welding Klimaanlagen Air conditioning Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features CoolSiC (TM) Schottky Diode Gen 5 CoolSiC (TM) Schottky diode gen 5 Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Kompaktes Design Compact design PressFIT Verbindungstechnik PressFIT contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-05-11DDB2U50N08W1R B23 Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 800 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip TH = 40C IFRMSM 50 A Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 40C I 50 A H RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 450 A p vj IFSM Surge forward current tp = 10 ms, Tvj = 150C 360 A Grenzlastintegral tp = 10 ms, Tvj = 25C 1000 As It It - value t = 10 ms, T = 150C 650 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 50 A V 1,10 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 800 V IR 0,10 mA Reverse current Wrmewiderstand, Chip bis Khlkrper pro Diode / per diode R 1,90 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Diode, Brems-Chopper / Diode, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 600 V vj RRM Repetitive peak reverse voltage Dauergleichstrom IF 40 A Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 80 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 72,0 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung IF = 40 A, VGE = 0 V Tvj = 25C 1,45 1,85 V Forward voltage I = 40 A, V = 0 V T = 125C V 1,60 V F GE vj F IF = 40 A, VGE = 0 V Tvj = 150C 1,65 V Rckstromspitze IF = 40 A, - diF/dt = 900 A/s (Tvj=150C) Tvj = 25C 10,0 A Peak reverse recovery current V = 300 V T = 125C I 11,0 A R vj RM Tvj = 150C 11,0 A Sperrverzgerungsladung IF = 40 A, - diF/dt = 900 A/s (Tvj=150C) Tvj = 25C 0,23 C Recovered charge V = 300 V T = 125C Q 0,23 C R vj r Tvj = 150C 0,23 C Abschaltenergie pro Puls IF = 40 A, - diF/dt = 900 A/s (Tvj=150C) Tvj = 25C 0,02 mJ Reverse recovery energy V = 300 V T = 125C E 0,02 mJ R vj rec Tvj = 150C 0,02 mJ Wrmewiderstand, Chip bis Khlkrper pro Diode / per diode RthJH 1,08 K/W Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-05-11