X-On Electronics has gained recognition as a prominent supplier of S34ML01G200BHI003 nand flash across the USA, India, Europe, Australia, and various other global locations. S34ML01G200BHI003 nand flash are a product manufactured by Infineon. We provide cost-effective solutions for nand flash, ensuring timely deliveries around the world.

S34ML01G200BHI003 Infineon

S34ML01G200BHI003 electronic component of Infineon
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See Product Specifications
Part No.S34ML01G200BHI003
Manufacturer: Infineon
Category:NAND Flash
Description: SLC NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 63-Pin BGA T/R
Datasheet: S34ML01G200BHI003 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2300: USD 1.6426 ea
Line Total: USD 3777.98

Availability - 0
MOQ: 2300  Multiples: 2300
Pack Size: 2300
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 2300
Multiples : 2300
2300 : USD 1.6426

     
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We are delighted to provide the S34ML01G200BHI003 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML01G200BHI003 and other electronic components in the NAND Flash category and beyond.

S34ML08G2 8Gb, 3 V, 4-bit ECC, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density Security 8 Gb (4 Gb x 2) One Time Programmable (OTP) area Serial number (unique ID) Architecture (For each 4 Gb device) Hardware program/erase disabled during power transition Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes 128-byte spare area Additional Features Block Size: 64 Pages or (128k + 8k) bytes Supports Multiplane Program and Erase commands Plane Size Supports Copy Back Program 2048 Blocks per Plane or (256M + 16M) bytes Supports Multiplane Copy Back Program Device Size Supports Read Cache 2 Planes per Device or 512 Mbyte Electronic Signature NAND Flash Interface Manufacturer ID: 01h Open NAND Flash Interface (ONFI) 1.0 compliant Operating Temperature Address, Data and Commands multiplexed Industrial: -40C to 85C Supply Voltage industrial Plus: -40C to 105C 3.3V device: Vcc = 2.7V ~ 3.6V Performance Page Read / Program Reliability Random access: 30 s (Max) 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 300 s (Typ) Blocks zero and one are valid and will be valid for at least 1000 Block Erase / Multiplane Erase program-erase cycles with ECC Block Erase time: 3.5 ms (Typ) Package Options Lead Free and Low Halogen 48-Pin TSOP 12 x 20 x 1.2 mm 63-Ball BGA 11 x 9 x 1 mm SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-00484 Rev. *J 18 Westlands Road Hong Kong Revised May 06, 2019S34ML08G2 Contents 1. General Description..................................................... 3 8.4 Pin Capacitance............................................................ 11 8.5 Power Consumptions and Pin Capacitance 2. Connection Diagram.................................................... 3 for Allowed Stacking Configurations ............................. 11 3. Pin Description............................................................. 4 9. Physical Interface ....................................................... 11 4. Block Diagrams............................................................ 5 9.1 Physical Diagram.......................................................... 12 5. Addressing ................................................................... 6 10. Ordering Information.................................................. 14 6. Read Status Enhanced................................................ 6 11. Document History....................................................... 15 7. Read ID.......................................................................... 7 7.1 Read Parameter Page ................................................... 8 8. Electrical Characteristics.......................................... 10 8.1 Valid Blocks ................................................................. 10 8.2 Recommended Operating Conditions.......................... 10 8.3 DC Characteristics....................................................... 10 Document Number: 002-00484 Rev. *J Page 2 of 15

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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