MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
Rev. V3
650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty
Features
MAGX-001214-650L00
GaN on SiC Depletion-Mode Transistor
Technology
Internally Matched
Common-Source Configuration
Broadband Class AB Operation
RoHS* Compliant and 260C Reflow Compatible
+50 V Typical Operation
MTTF = 600 Years (T < 200 C)
J
Applications
L-Band pulsed radar.
Description
The MAGX-001214-650L0x is a gold-metalized
matched Gallium Nitride (GaN) on Silicon Carbide
(SiC) RF power transistor optimized for pulsed
L-Band radar applications. Using state of the art
wafer fabrication processes, these high performance
Ordering Information
transistors provide high gain, efficiency, bandwidth,
and ruggedness over a wide bandwidth for todays
Part Number Description
demanding application needs. High breakdown
voltages allow for reliable and stable operation
MAGX-001214-650L00 GaN Transistor
under more extreme mismatch load conditions
compared with older semiconductor technologies.
1200-1400 MHz
MAGX-L21214-650L00
Evaluation Board
Typical RF Performance Under Standard Operating Conditions, P = 650 W (Peak)
OUT
VSWR-S
Freq. P Gain I Eff. RL Droop +1dB OD
IN D
(3:1)
(MHz) (W) (dB) (A) (%) (dB) (dB) (W)
1200 8.7 18.8 21.3 61.0 -13.9 0.2 717 S
1250 8.5 18.9 22.0 58.9 -13.8 0.3 726 S
1300 8.0 19.1 22.4 57.8 -13.5 0.3 724 S
1350 7.0 19.7 21.8 59.7 -15.8 0.3 723 S
1400 7.0 19.7 21.1 61.4 -15.0 0.2 697 S
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
MAGX-001214-650L0x
GaN on SiC HEMT Pulsed Power Transistor
Rev. V3
650 W Peak, 1200-1400 MHz, 300 s Pulse, 10% Duty
Electrical Specifications: Freq. = 1200 - 1400 MHz, T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
RF Functional Tests
Peak Input Power
P - 7.5 10.3 W
IN
Power Gain G 18 19.5 - dB
P
V = 50 V, I = 500 mA
DD DQ
Drain Efficiency 55 60 - %
D
Pulse Width = 300 s,
Duty Cycle = 10%
Pulse Droop
Droop - 0.3 0.6 dB
P = 650 W Peak (65 W avg.)
OUT
Load Mismatch Stability VSWR-S - 2:1 - -
Load Mismatch Tolerance VSWR-T - 3:1 - -
Electrical Characteristics: T = 25C
A
Parameter Test Conditions Symbol Min. Typ. Max. Units
DC Characteristics
Drain-Source Leakage Current V = -8 V, V = 175 V I - 1.7 33 mA
GS DS DS
Gate Threshold Voltage V = 5 V, I = 90 mA V -5 -2.9 -2 V
DS D GS (TH)
Forward Transconductance V = 5 V, I = 21 mA G 16.2 21.7 - S
DS D M
Dynamic Characteristics
Input Capacitance Not applicable - Input matched C N/A N/A N/A pF
ISS
Output Capacitance
C - 55 - pF
OSS
V = 50 V, V = -8 V,
DS GS
Freq. = 1 MHz
Reverse Transfer Capacitance
C - 5.5 - pF
RSS
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit: