BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product 0.3 Watts, PNP Plastic-Encasulate Transistor FEATURES - Ideally suited for automatic insertion - Epitaxial planar die construction - For switching, AF driver and amplifer applications - Complementary NPN type available (BC817) MECHANICAL DATA - Case: SOT- 23, Molded plastic - Terminal: Solderable per MIL-STD-202, method 208 - Case material: Molded plastic, UL flammability classification rating 94V-0 - Moisture sensitivity: Level 1 per J-STD-020C - Lead free plating SOT-23 - Weight: 0.008grams (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Power Dissipation P 0.3 W D I Collector Current - Continuous -0.5 A C Junction Temperature T 150 C J Storage Temperature Range T -55 to + 150 C STG PARAMETER VALUE SYMBOL UNIT Collector-Base Breakdown Voltage I = -10 A I = 0 V -50 V C E CBO I = -10 mA I = 0 V Collector-Emitter Breakdown Voltage -45 V C B CEO Emitter-Base Breakdown Voltage I = -1 AI = 0 V -5 V E C EBO V = -45 V I = 0 -0.1 A CB E I Collector Cut-off Current CBO V = -40 V I = 0 -0.2 A CB B Emitter Cut-off Current V = -4 V I = 0 I -0.1 A EB C EBO at I = -500mA I = 50 mA V Collector-Emitter Saturation Voltage -0.7 V C B CE(sat) Base-Emitter Saturation Voltage at I = -500 mA I = 50 mA V -1.2 V C B BE(sat) Transition Frequency V = -5 V I = -10 mA f = 50MHz f 80 MHz CE C T 807-16 100 250 V = -1 V I = -100 mA h DC Current Gain 807-25 160 400 CE C FE(1) 807-40 250 600 Version: F14 Document Number: DS S1404007BC807-16/-25/-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Gain Bandwidth Product VS. Collector Current Fig. 1 Power Derating Curve 1000 400 o T = 25 C A See Note 1 f = 20 MHz 300 -V = 5.0 V CE 100 200 -V = 1 V CE 100 10 1 10 100 1000 0 0 50 100 150 200 I , Collector Current (mA) C o T , Substrate Temperature ( C) SB Fig. 4 DC Current Gain VS. Collector Current Fig.3 Collector Sat Voltage VS. Collector Current 1000 1000 -V = 1V o CE - 50 C o 150 C o 25 C 100 o 25 C Typical -------- Limits 100 o 10 at T = 25 C A o 150 C o - 50 C -I / -I = 10 C B 1 10 0. 1 0. 1 1 10 100 1000 0 0. 1 0. 2 0. 3 0. 4 0. 5 -I , Collector Current (mA) -V , Collector Saturation Voltage (V) C CESAT Fig. 6 Typical Emitter-Collector Characteristics Fig.5 Typical Emitter-Collector Characterisitcs 100 500 0.4 2.8 3.2 2.4 0.35 1.4 80 2.0 400 1.8 0.3 60 1.6 0.25 300 1.0 1.2 0.2 40 200 0.8 0.15 0.6 20 100 0.1 0.4 -I = 0.05 mA B -I = 0.2 mA B 0 0 010 20 01 2 -V , Collector-Emitter Voltage (V) -V , Collector-Emitter Voltage (V) CE CE Document Number: DS S1404007 Version: F14 -I Collector Current (mA) -I , Collector Current (mA) C, c P , Power Dissipation (mW) D -I , Collector Current ( mA ) C f Gain Bandwidth Product T, h , DC Current Gain FE