BGA2031/1,115 NXP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 BGA2031/1 MMIC variable gain amplifier Product specification 2001 Feb 05 Supersedes data of 2000 Mar 02NXP Semiconductors Product specification MMIC variable gain amplifier BGA2031/1 FEATURES PINNING High gain PIN DESCRIPTION Excellent adjacent channel power rejection 1RFin Small SMD package 2CTRL Low dissipation. 3V S1 4V +RFout S2 APPLICATIONS 5GND 6GND General purpose variable gain amplifier for low voltage and medium power Driver for power amplifiers in systems that require good handbook, halfpage V linearity, such as CDMA, both cellular band (850 MHz) S1 65 4 and PCS (1.9 GHz). This is because of the high output RFin power and good linearity. V +RFout S2 GND DESCRIPTION CTRL BIAS Silicon Monolitic Microwave Integrated Circuit (MMIC) CIRCUIT 12 3 2 stage variable gain amplifier in double polysilicon Top view MAM440 technology in a 6-pin SOT363 SMD plastic package for low voltage medium power applications. Marking code: A3 Fig.1 Simplified outline (SOT363) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V supply voltage 3 3.3 V S1 V supply voltage 3 3.3 V S2 I supply current pins 3 and 4 V =0 0 10 A S CTRL V =2.7 V V =3V 51 63 mA CTRL S V =2.4 V V =3V 30 37 mA CTRL S P load power at 1 dB gain compression point 13 dBm L f=1.9GHz ACPR adjacent channel power rejection f = 1.9 GHz P =10dBm 49 dBc L f= 836MHz P =8dBm 48 dBc L G power gain f = 1.9 GHz P =12dBm 23 dB p L f= 836MHz P =8dBm 24 dB L G gain control range f = 836 MHz P =8dBm 62 dB L CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. 2001 Feb 05 2