X-On Electronics has gained recognition as a prominent supplier of BLF244,112 rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. BLF244,112 rf mosfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

BLF244,112 NXP

BLF244,112 electronic component of NXP
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See Product Specifications
Part No.BLF244,112
Manufacturer: NXP
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors RF DMOS 15W VHF
Datasheet: BLF244,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 40.8859 ea
Line Total: USD 40.89

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 40.8859
2 : USD 40.4272
5 : USD 39.4977
10 : USD 38.7855
15 : USD 38.5078

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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We are delighted to provide the BLF244,112 from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BLF244,112 and other electronic components in the RF MOSFET Transistors category and beyond.

BLF244 VHF power MOS transistor Rev. 4 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product specication VHF power MOS transistor BLF244 FEATURES PIN CONFIGURATION High power gain Low noise figure handbook, halfpage Easy power control 1 4 Good thermal stability d Withstands full load mismatch Gold metallization ensures g excellent reliability. MBB072 s 23 DESCRIPTION Silicon N-channel enhancement MSB057 mode vertical D-MOS transistor designed for large signal amplifier Fig.1 Simplified outline and symbol. applications in the VHF frequency range. The transistor is encapsulated in a CAUTION 4-lead SOT123A flange package, with a ceramic cap. All leads are This product is supplied in anti-static packing to prevent damage caused by isolated from the flange. electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. Matched gate-source voltage (V ) GS groups are available on request. WARNING PINNING - SOT123A Product and environmental safety - toxic materials PIN DESCRIPTION This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of 1 drain this product should be aware of its nature and of the necessary safety 2 source precautions. After use, dispose of as chemical or special waste according to 3 gate the regulations applying at the location of the user. It must never be thrown 4 source out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 175 28 15 >13 >50 2003 Oct 13 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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