BSS138PW

BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 320 mA D amb V =10V GS 2 R drain-source on-state T =25 C -0.9 1.6 DSon j resistance V =10V GS I = 300 mA D 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad 2 for drain 1 cm . 2 Pulse test: t 300 s 0.01. pBSS138PW NXP Semiconductors 60 V, 320 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1 G gate 3 D 2S source 3 D drain G 12 mbb076 S 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BSS138PW SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes 1 Type number Marking code BSS138PW XJ* 1 * = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 320mA amb T =100 C- 200mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p BSS138PW All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 2 November 2010 2 of 16