NX3008PBK

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C - - -230 mA D GS amb Static characteristics R drain-source on-state V =-4.5V -2.8 4.1 DSon GS resistance I = -200 mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT23NX3008PBK NXP Semiconductors 30 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBK TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBK KT% 1 % = placeholder for manufacturing site code. NX3008PBK All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 1 August 2011 2 of 16