X-On Electronics has gained recognition as a prominent supplier of FDD3670 mosfet across the USA, India, Europe, Australia, and various other global locations. FDD3670 mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDD3670 ON Semiconductor

Hot FDD3670 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDD3670
Manufacturer: ON Semiconductor
Category:MOSFET
Description: MOSFET 100V NCh PowerTrench
Datasheet: FDD3670 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6882 ea
Line Total: USD 0.69

Availability - 1
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6882
10 : USD 0.6662
25 : USD 0.6596
50 : USD 0.653
100 : USD 0.6464
250 : USD 0.64
500 : USD 0.6335
1000 : USD 0.6272

187 - WHS 2


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 2.5688
10 : USD 2.3559
30 : USD 2.2242
100 : USD 2.0884
500 : USD 2.0258
1000 : USD 1.9987

12024 - WHS 3


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6675
10 : USD 1.357
100 : USD 1.265
2500 : USD 1.2535
5000 : USD 1.219
10000 : USD 1.2075

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
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We are delighted to provide the FDD3670 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD3670 and other electronic components in the MOSFET category and beyond.

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD3670 FDD3670 100V N-Channel PowerTrench MOSFET Features General Description 34 A, 100 V. R = 32 m V = 10 V DS(ON) GS This N-Channel MOSFET has been designed RDS(ON) = 35 m V GS = 6 V specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge (57 nC typical) switching PWM controllers. Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable High performance trench technology for extremely RDS(ON) specifications. low RDS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power High power and current handling capability supply designs with higher overall efficiency. D D G G S TO-252 S o Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 34 A D (Note 3) Drain Current Pulsed 100 PD Maximum Power Dissipation T = 25C (Note 1) 83 W C 3.8 T = 25C (Note 1a) A 1.6 T = 25C (Note 1b) A T , T Operating and Storage Junction Temperature Range 55 to +175 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 RJC C/W R Thermal Resistance, Junction-to-Ambient (Note 1b) 96 C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD3670 FDD3670 13 16mm 2500 units 2001 Semiconductor Components Industries, LLC. Publication Order Number: FDD3670/D November-2017, Rev. 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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