Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.J304 J304 N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50. TO-92 1 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* T =25C unless otherwise noted C Symbol Parameter Ratings Units V Drain-Gate Voltage 30 V DG V Gate-Source Voltage -30 V GS I Forward Gate Current 10 mA GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdwon Voltage I = -1.0 A, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = -20V, V = 0 -100 pA GSS GS DS V (off) Gate-Source Cutoff Voltage V = 15V, I = 1.0nA -2.0 -6.0 V GS DS D On Characteristics I Zero-Gate Voltage Drain Current V = 15V, VGS = 0 5.0 15 mA DSS DS gfs Forward Transconductance V = 0V, V = 15V, f = 1KHz 4500 7500 S GS DS goss Output Conductance V = 0V, V = 15V, f = 1KHz 50 S GS DS Thermal Characteristics T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25C 2.8 mW/C R Thermal Resistance, Junction to Case 125 C/W JC R Thermal Resistance, Junction to Ambient 357 C/W JA * Device mounted on FR-4 PCB 1.5 1.6 0.06 2002 Fairchild Semiconductor Corporation Rev. A, September 2002