MCR12LDG ON Semiconductor

MCR12LD, MCR12LM, MCR12LN Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for halfwave ac control applications, such as MCR12LD, MCR12LM, MCR12LN THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.2 C/W JC Junction toAmbient 62.5 R JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current T = 25C I , 0.01 mA J DRM (V = Rated V and V Gate Open) T = 125C I 2.0 D DRM RRM J RRM ON CHARACTERISTICS Peak Forward On State Voltage (Note 2) V 2.2 V TM (I = 24 A) TM Gate Trigger Current (Continuous dc) I 2.0 4.0 8.0 mA GT (V = 12 V, R = 100 ) D L Holding Current I 4.0 10 20 mA H (V = 12 V, Gate Open, Initiating Current = 200 mA) D Latch Current (V = 12 V, Ig = 20 mA) I 6.0 12 30 mA D L Gate Trigger Voltage (Continuous dc) V 0.5 0.65 0.8 V GT (V = 12 V, R = 100 ) D L DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage dv/dt 100 250 V/ s (V = Rated V , Exponential Waveform, Gate Open, T = 125C) D DRM J Critical Rate of Rise of OnState Current di/dt 50 A/ s IPK = 50 A Pw = 40 sec diG/dt = 1 A/ sec, Igt = 50 mA 2. Indicates Pulse Test: Pulse Width 1.0 ms, Duty Cycle 2%.