X-On Electronics has gained recognition as a prominent supplier of TQP9424SR rf amplifier across the USA, India, Europe, Australia, and various other global locations. TQP9424SR rf amplifier are a product manufactured by Qorvo. We provide cost-effective solutions for rf amplifier, ensuring timely deliveries around the world.

TQP9424SR Qorvo

TQP9424SR electronic component of Qorvo
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Part No.TQP9424SR
Manufacturer: Qorvo
Category:RF Amplifier
Description: RF Amplifier 2-2.4GHz .5Watt Gain 36dB
Datasheet: TQP9424SR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 18.2539
25 : USD 14.6932
100 : USD 12.9638
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Amplifier Type
Frequency Range
Brand
Number Of Channels
Development Kit
Input Return Loss
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the TQP9424SR from our RF Amplifier category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TQP9424SR and other electronic components in the RF Amplifier category and beyond.

TQP9424 High Linearity W Small Cell PA General Description The TQP9424 is a high-linearity three-stage power amplifier in a low-cost surface-mount package with on-chip bias control and temperature control circuits, suitable for small cell base station applications. The TQP9424 provides 36.3dB gain and +27dBm linear power over the 2.32.4GHz frequency range covering 7x7mm Leadless SMT Package bands 30 and 40. This amplifier is able to achieve 47dBc ACLR at +27dBm output power using a 20 MHz LTE signal. Product Features The TQP9424 integrates three high performance amplifier 2.32.4GHz Operating Frequency Range stages onto a module to allow for a compact system design Fully integrated, 3-Stage Power Amplifier and requires very few external components for operation. Internally Matched 50 Input/Output The amplifier is bias adjustable allowing the amplifiers 47dBc ACLR at Pavg = +27dBm power consumption to be optimized. The TQP9424 is 36.3dB Gain available in a lead-free/RoHS-compliant 7x7mm surface 14% PAE at +27dBm mount package. 470mA Quiescent Current On-chip Control Bias and Temp. Comp Circuit Lead-free/RoHS compliant Applications Functional Block Diagram Small Cell/Picocell Vref GND Bands 30 & 40 1 14 Enterprise Femtocell GND GND Customer Premises Equipment (CPE) 2 13 Data Cards and Terminals GND RF out 3 12 Distributed Antenna Systems (DAS) Booster Amps, Repeaters VCC1 VCC2 Biasing Circuit 11 4 RF in GND 5 10 GND GND 6 9 Backside Paddle RF/DC GND NC GND 7 8 Top View Ordering Information Part No. Description TQP9424SR 7 reel with 100pcs TQP9424TR13 2,500 pieces on a 13 reel (standard) TQP9424PCB401 2.32.4GHz Evaluation Board Data Sheet August 4, 2017 Subject to change without notice - 1 of 8 - www.qorvo.com TQP9424 High Linearity W Small Cell PA Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature 55 to +150 C V , V +3.6 +4.5 +5.25 V CC1 cc2 Supply Voltage (V ) +6 V V +2.75 +2.85 +2.95 V CC ref Vref +3.5 V TCASE 40 +85 C RF Input Power, CW, 50, T=25 C +13 dBm Tj at TCASE max +156 C Electrical specifications are measured at specified test conditions. Tj at T = 125C +196C CASE Specifications are not guaranteed over all recommended operating Exceeding any one or a combination of the Absolute Maximum Rating conditions. conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications (1) Parameter Conditions Min Typ Max Units Operational Frequency Range 2300 2400 MHz Test Frequency 2350 MHz Gain 32 38 dB 35.5 Input Return Loss 15 dB 23 Output Return Loss 15 dB 25 P1dB dBm 35 ACLR P = +27dBm, 20MHz LTE E-TM1.1, 9.5dB PAR -45 dBc OUT 47 ACLR POUT = +27 dBm, 2X20MHz LTE E-TM1.1, 9.5dB PAR -41 dBc Power Added Efficiency POUT = +27dBm, 20MHz LTE E-TM1.1, 9.5dB PAR 13 14 % 2 Quiescent Current, ICQ VCC1 + VCC2 330 410 500 mA Leakage Current VCC = +4.5 V, Vref = 0 V 3 10 A Reference Current , Iref Vref = +2.85V 15 19.5 mA Operational Current, ICC Pout = +27dBm 785 870 mA Rise time (10%-90%) 610 ns Switching Speed Fall time (90%-10%) 495 ns Pout +27dBm, In & Out of band load VSWR 10:1 -60 dBc Spurious Output Level No permanent degradation or failure 10:1 - VSWR survivability 2F0 (Pout = 27 dBm) -40 -35 dBc Harmonics 3F0 (Pout = 27 dBm) -48 -43 dBc 4F0 (Pout = 27 dBm) -70 -65 dBc Thermal Resistance, Module (junction to case) 17.4 C/W jc Notes: 1. Test conditions unless otherwise noted: V =V = +4.5V, V = +2.85V, Temp=+25C, 50 system. CC1 cc2 ref 2. Current through Vcc1 does not vary with power. Vcc1 provides the bias voltage to the current mirror circuit along with Vref to set the bias point for the whole amplifier. Parameter Conditions -40C +25C +85C Units Gain Small Signal 38 36.3 34.9 dB ACLR-L P = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR -47.5 -47 -46.7 dBc OUT ACLR-H P = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR -52.3 -51 -49 dBc OUT PAE P = +27 dBm, 20MHz LTE E-TM1.1, 9.5dB PAR 14.8 14 13 % OUT P1dB +36.8 +36.3 +35.6 dBm Test Frequency = 2350MHz Data Sheet August 4, 2017 Subject to change without notice - 2 of 8 - www.qorvo.com

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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