JANTX2N2907A Semicoa

2N2907A Small Signal Switching Transistor PNP Silicon 2N2907A ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc) 60 C CollectorEmitter Cutoff Current I nAdc CES (V = 50 Vdc) 50 CE CollectorBase Cutoff Current I CBO (V = 50 Vdc, I = 0) 10 nAdc CB E (V = 60 Vdc, I = 0) 10 Adc CB E EmitterBase Cutoff Current I EBO (V = 4.0 Vdc) 50 nAdc EB (V = 5.0 Vdc) 10 Adc EB ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 0.1 mAdc, V = 10 Vdc) 75 C CE (I = 1.0 mAdc, V = 10 Vdc) 100 450 C CE (I = 10 mAdc, V = 10 Vdc) 100 C CE (I = 150 mAdc, V = 10 Vdc) 100 300 C CE (I = 500 mAdc, V = 10 Vdc) 50 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 1.6 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.6 1.3 C B (I = 500 mAdc, I = 50 mAdc) 2.6 C B SMALLSIGNAL CHARACTERISTICS Magnitude of SmallSignal Current Gain h fe (I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 2.0 C CE SmallSignal Current Gain h fe (I = 1.0 mAdc, V = 10 Vdc, f = 1 kHz) 100 C CE Output Capacitance C pF obo (V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz) 8.0 CB E Input Capacitance C pF ibo (V = 2.0 Vdc, I = 0, 100 kHz f 1.0 MHz) 30 EB C SWITCHING CHARACTERISTICS TurnOn Time t ns on (Reference Figure in MILPRF19500/291) 45 TurnOff Time t ns off (Reference Figure in MILPRF19500/291) 300 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.