G H X S 0 5 0 B 1 2 0 S - D 3 VDC 1200 V I 50 A F T ,max 175 C j 1200V SiC Power Module Dual Diode Pack Features Package SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature independent switching behavior - Positive temperature coefficient on V F Low stray inductance High junction temperature operation All parts tested to greater than 1,400V Parallel Benefits Outstanding performance at high frequency operation Low loss and low EMI noise Very rugged and easy mounting Internally isolated package (AlN) Part Package Marking Low junction to case thermal resistance Easy paralleling due to positive T of V C F GHXS050B120S-D3 SOT-227 GHXS050B120S-D3 RoHS compliant Applications Switched-mode power supply Induction heater Welding equipment Charging station Maximum Ratings, at T =25 C, unless otherwise specified (per leg) j Characteristics Symbol Conditions Values Unit T =25 C, T =175 C 101 C j Continuous forward current I T =130 C, T =175 C 50 A F* C j T =150 C, T =175 C 34 C j T =25 C, t =8.3 ms 390 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 340 C p Non-repetitive peak forward current I T =25 C, t =10 s 2000** A F,max C p T =25 C, t =8.3 ms 631 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 480 C p V T =25 C Repetitive peak reverse voltage 1200 V RRM j dv/dt 200 V/ns Diode dv/dt ruggedness Turn-on slew rate, repetitive Power dissipation P T =25 C 349 W tot* C T Operating junction temperature -55175 C j T Storage temperature -55150 C storage Notes: *Typical Rth used JC **Limited by testing equipment Rev. 1, 9/4/2020 www.SemiQ.com p.11200V SiC Power Module G H X S 0 5 0 B 1 2 0 S - D 3 Electrical Characteristics, at T =25 C, unless otherwise specified (per leg) j Values Characteristics Symbol Conditions Unit min. typ. max. V I =100A, T =25 C DC blocking voltage 1200 - - V DC R j Breakdown voltage V I =2mA, T =25 C 1400 - - V BR R j I =50A, T =25 C - 1.5 1.7 F j Diode forward voltage V I =50A, T =125 C - 1.8 - V F F j I =50A, T =175 C - 2.1 2.7 F j V =1,200V, T =25 C - 6 100 R j V =1,400V, T =25 C - 35 - R j Reverse current I mA R V =1,200V, T =125 C - 49 - R j V =1,200V, T =175 C - 193 750 R j Q V =800V, T =25 C Total capacitive charge - 269 - nC C R j V =1V, f=1 MHz - 3040 - R Total capacitance C V =400V, f=1 MHz - 253 - pF R V =800V, f=1 MHz - 181 - R Thermal and Package Characteristics, at Tj=25 C, unless otherwise specified Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R Per leg - 0.43 0.52 C/W thJC Mounting torque M M4-0.7 screws 1.1 - 1.5 N-m d Terminal connection torque M M4-0.7 screws - 1.1 1.3 N-m dt W Package weight - 32 - g t I < 1mA, ISOL Isolation voltage V 2500 - - V ISOL 50/60 Hz, 1 min Typical Performance Per Leg 100 1.E-03 -55C -55C 90 25C 25C 80 1.E-04 75C 75C 125C 125C 70 175C 175C 60 1.E-05 50 40 1.E-06 30 20 1.E-07 10 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T ) Fig. 2 Reverse Characteristics (parameterized on T ) j j Rev. 1, 9/4/2020 www.SemiQ.com p.2 I (A) F I (A) R