STTH1R02A STMicroelectronics

STTH1R02 Datasheet 200 V - 1.5 A ultrafast recovery diode A Features K Very low conduction losses A A Negligible switching losses Low forward voltage drop High junction temperature ECOPACK 2 K K SMA SMB Applications Switching diode A A LED Lighting Auxiliary power supply K Flyback diode K Description DO-15 DO-41 The STTH1R02 uses ST s new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in SMA, SMB, DO-41 and DO-15, the STTH1R02 is ideal for use low voltage, high frequency inverters, free wheeling and polarity protection Product status STTH1R02 Product summary Symbol Value I 1.5 A F(AV) V 200 V RRM T 175 C j(max.) V 0.7 V F(typ.) trr(typ.) 15 ns DS4743 - Rev 4 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH1R02 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM T = 150 C SMA, SMB L I Average forward current = 0.5, square wave 1.5 A F(AV) DO-41, DO-15 T = 135 C L I Surge non repetitive forward current t = 10 ms sinusoidal 60 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature +175 C j Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit R Junction to lead SMA, SMB 30 th(j-l) C/W R Junction to lead Lead length = 10 mm on infinite heatsink DO-15, DO-41 45 th(j-l) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 3 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 2 20 j T = 25 C - 0.89 1.00 j (2) T = 100 C I = 1.5 A V Forward voltage drop - 0.76 0.85 V F j F T = 150 C - 0.70 0.80 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.68 x I + 0.08 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS4743 - Rev 4 page 2/15