X-On Electronics has gained recognition as a prominent supplier of 10-FZ12NMA080SH01-M260F igbt modules across the USA, India, Europe, Australia, and various other global locations. 10-FZ12NMA080SH01-M260F igbt modules are a product manufactured by Vincotech. We provide cost-effective solutions for igbt modules, ensuring timely deliveries around the world.

10-FZ12NMA080SH01-M260F Vincotech

10-FZ12NMA080SH01-M260F electronic component of Vincotech
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See Product Specifications
Part No.10-FZ12NMA080SH01-M260F
Manufacturer: Vincotech
Category:IGBT Modules
Description: Trans IGBT Module N-CH 1.2KV 66A 20-Pin
Datasheet: 10-FZ12NMA080SH01-M260F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 34.6382 ea
Line Total: USD 103.91

Availability - 0
MOQ: 3  Multiples: 3
Pack Size: 3
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 3
Multiples : 3
3 : USD 34.6382

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Continuous Collector Current at 25 C
Maximum Operating Temperature
Brand
Operating Temperature Classification
Gate To Emitter Voltage Max
Channel Type
Collector-Emitter Voltage
Rad Hardened
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We are delighted to provide the 10-FZ12NMA080SH01-M260F from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 10-FZ12NMA080SH01-M260F and other electronic components in the IGBT Modules category and beyond.

10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY datasheet flowMNPC 0 1200 V / 80 A Features flow0 12mm housing mixed voltage component topology neutral point clamped inverter reactive power capability low inductance layout Target Applications Schematic solar inverter UPS Types 10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY Maximum Ratings T =25C, unless otherwise specified j Condition Parameter Symbol Value Unit Half Bridge IGBT V Collector-emitter break down voltage 1200 V CE T =80C 69 h I T =Tjmax DC collector current C A j T =80C 88 c I t limited by T Repetitive peak collector current CRM 240 A p jmax T =80C 158 h P T =Tjmax Power dissipation tot W j T =80C 239 c Gate-emitter peak voltage V 20 V GE t T 150C 10 s SC j Short circuit ratings V CC V =15V 800 V GE V max = 1200V CE Turn off safe operating area (RBSOA) I 160 A cmax T max 150C vj T Maximum Junction Temperature jmax 175 C Neutral Point FWD Peak Repetitive Reverse Voltage V 600 V RRM T =80C 47 h I DC forward current T =Tjmax A F j T =80C 62 c Surge forward current I 600 A FSM t =8,3ms , sin 180 T =25C p c 2 I2t-value 1490 A2s I t I Repetitive peak forward current FRM Square wave, 20 kHz 120 A T =80C 58 h P T =Tjmax Power dissipation tot W j T =80C 88 c Maximum Junction Temperature T 175 C jmax copyright Vincotech 1 13 May. 2015 / Revision 10 10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY datasheet Maximum Ratings T =25C, unless otherwise specified j Condition Parameter Symbol Value Unit Neutral Point IGBT V Collector-emitter break down voltage CE 600 V T =80C h 52 DC collector current I T =Tjmax A C j T =80C 68 c Repetitive peak collector current I t limited by T 225 A CRM p jmax T =80C 72 h P Power dissipation T =Tjmax W tot j T =80C 109 c V Gate-emitter peak voltage 20 V GE t T 150C 6 s SC j Short circuit ratings V V =15V 360 V CC GE V max = 600V CE I Turn off safe operating area (RBSOA) cmax 150 A T max 150C vj Maximum Junction Temperature T 175 C jmax Half Bridge FWD V Peak Repetitive Reverse Voltage 1200 V RRM T =80C 47 h I T =Tjmax DC forward current F A j T =80C 62 c I Surge forward current 335 A FSM t =10ms , sin 180 T =125C p j 2 I2t-value I t 560 A2s Repetitive peak forward current I t limited by T 100 A FRM p jmax T =80C 79 h Power dissipation P T =Tjmax W tot j T =80C 119 c T Maximum Junction Temperature 175 C jmax Thermal Properties Storage temperature T -40+125 C stg T Operation temperature under switching condition -40+(Tjmax - 25) C op Insulation Properties Insulation voltage V is t=2s DC voltage 4000 V Creepage distance min 12,7 mm Clearance 8,95 mm copyright Vincotech 2 13 May. 2015 / Revision 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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