X-On Electronics has gained recognition as a prominent supplier of SI9407BDY-T1-GE3 mosfet across the USA, India, Europe, Australia, and various other global locations. SI9407BDY-T1-GE3 mosfet are a product manufactured by Vishay. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SI9407BDY-T1-GE3 Vishay

SI9407BDY-T1-GE3 electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.SI9407BDY-T1-GE3
Manufacturer: Vishay
Category:MOSFET
Description: MOSFET -60V Vds 20V Vgs SO-8
Datasheet: SI9407BDY-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4201 ea
Line Total: USD 2.1

Availability - 3137
Ships to you between
Fri. 21 Jun to Wed. 26 Jun
MOQ: 5  Multiples: 5
Pack Size: 5

SI9407BDY-T1-GE3 More Buying Options & Price Grid(s)

Availability Price Quantity
2425 - WHS 1


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.4095
5000 : USD 0.4095
7500 : USD 0.4095
10000 : USD 0.4095
12500 : USD 0.4095

322748 - WHS 2


Ships to you between
Fri. 21 Jun to Wed. 26 Jun

MOQ : 500
Multiples : 1
500 : USD 0.25

3137 - WHS 3


Ships to you between
Fri. 21 Jun to Wed. 26 Jun

MOQ : 5
Multiples : 5
5 : USD 0.3781
50 : USD 0.3031
150 : USD 0.2709
500 : USD 0.2309
2500 : USD 0.2127
5000 : USD 0.2021

11768 - WHS 4


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 1.0396
10 : USD 0.8763
100 : USD 0.6934
500 : USD 0.6129
1000 : USD 0.5451
2500 : USD 0.5416

29100 - WHS 5


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.7708

14550 - WHS 6


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.4027
5000 : USD 0.3916
12500 : USD 0.3827

71 - WHS 7


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 17
Multiples : 1
17 : USD 0.734
25 : USD 0.4805

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif
 
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We are delighted to provide the SI9407BDY-T1-GE3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI9407BDY-T1-GE3 and other electronic components in the MOSFET category and beyond.

Additional Infomation About Product

The SI9407BDY-T1-GE3 MOSFET is a high-speed SmartFET device from Vishay that features low on-resistance and high maximum current. The device has a break down voltage of up to -60V and gate threshold voltage of 20V. It is housed in an 8-pin SO-8 package. It is designed for high-visibility intelligent power applications such as motor control, telecomms, DC-DC converters, and automotive systems. The device boasts low input capacitance and low gate charge to reduce ringing and maintain stability. The device can be used in a cascode configuration with two devices back to back to reduce losses and improve signal transmission performance.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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