Advance PXAE213708NB Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 2180 MHz Description Advance Specification Data Sheets describe products that are The PXAE213708NB is a 400-watt LDMOS FET intended for use in multi- being considered by Wolfspeed for standard cellular power amplifier applications in the 2110 to 2180 MHz development and market intro- frequency band. Features include input matching, high gain and thermally- duction. The target performance enhanced package with earless flange. Manufactured with Wolfspeed s shown in Advance Specifications advanced LDMOS process, this device provides excellent thermal perform- is not final and should not be used ance and superior reliability. for any design activity. Please contact Wolfspeed about the fu- ture availability of these products. Features Broadband internal input and output matching Asymmetrical Doherty design - Main: P = 160 W Typ 3dB - Peak: P = 290 W Typ 3dB Typical Pulsed CW performance, 2180 MHz, 28 V, Doherty configuration, 10 s pulse width, 10% duty c ycle, class AB - Output power at P = 400 W 3dB - Power Added Efficienc y at P = 60.3% 3dB PXAE213708NB - Power Gain = 13.7 dB Package PG-HB2SOF-8-1 Integrated ESD protection Low thermal resistance Pb-free and RoHS compliant Target RF Characteristics Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture) V = 29 V, I = 750 mA, V = 1.5 V, P = 54 W avg, = 2180 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = DD DQ GSPEAK OUT 10 dB 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain G 16 dB ps Drain Efficienc y h 51 % D Adjacent Channel Power Ratio ACPR 27 dBc Output PAR at 0.01% probability on CCDF OPAR 8.7 dB All published data at T = 25C unless otherwise indicated CASE ESD: Electrostatic discharge sensitive deviceobserve handling precautions Rev. 01, 2018-09-26 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.comAdvance PXAE213708NB 2 DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage V = 0 V, I = 10 mA V 65 V GS DS (BR)DSS Drain Leakage Current V = 28 V, V = 0 V I 1 A DS GS DSS V = 63 V, V = 0 V I 10 A DS GS DSS Gate Leakage Current V = 10 V, V = 0 V I 1 A GS DS GSS On-State Resistance (main) V = 10 V, V = 0.1 V R TBD W GS DS DS(on) (peak) V = 10 V, V = 0.1 V R TBD W GS DS DS(on) Operating Gate Voltage (main) V = 28 V, I = 750 mA V 2.9 V DS DQ GS (peak) V = 28 V, I = 0 mA V 1.5 V DS DQ GS Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage V 65 V DSS Gate-Source Voltage V 6 to +10 V GS Operating Voltage V 0 to +32 V DD Junction Temperature T 225 C J 65 to +150 C Storage Temperature Range T STG Thermal Characteristics Characteristic Symbol Value Unit Thermal Resistance R TBD C/W qJC Ordering Information Type and Version Order Code Package Description Shipping PXAE213708NB V1 R2 TBD PG-HB2SOF-8-1 Tape & Reel, 250 pcs Pinout Diagram (top vie w) V1 Main Peak V2 Pin Description V V D1 D2 D1 Drain De vice 1 (Main) D2 Drain De vice 2 (Peak) G1 Gate De vice 1(Main) G2 Gate De vice 2 (Peak) GND Ground V1, V2 Drain video decoupling, no DC bias G1 G2 Pg-hb2sof-8 06-20-2017 Lead connections for PXAE213708NB 4600 Silicon Drive Durham, NC 27703 www.wolfspeed.com Rev. 01, 2018-09-26 GND GND