Product Information

QS8K21TR

Hot QS8K21TR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET TRANS MOSFET NCH 45V 4A 8PIN
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

150: USD 0.2697 ea
Line Total: USD 40.46

4127 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 150  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1982 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

QS8K21TR
ROHM

1 : USD 0.8752
10 : USD 0.7291
100 : USD 0.583
500 : USD 0.5083
1000 : USD 0.4255
3000 : USD 0.4071
6000 : USD 0.4071
9000 : USD 0.391

2706 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 154
Multiples : 1

Stock Image

QS8K21TR
ROHM

154 : USD 0.6899
250 : USD 0.6622
500 : USD 0.6383
1000 : USD 0.6175
2500 : USD 0.5993

155 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 154
Multiples : 1

Stock Image

QS8K21TR
ROHM

154 : USD 0.6899

4127 - WHS 4


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 150
Multiples : 1

Stock Image

QS8K21TR
ROHM

150 : USD 0.2714
200 : USD 0.2697
500 : USD 0.2584
1000 : USD 0.2552
2000 : USD 0.2535
3000 : USD 0.2502

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

QS8K21 Datasheet 45V Nch + Nch Middle Power MOSFET llOutline TSMT8 V 45V DSS R (Max.) 53m DS(on) I 4A D P 1.5W D llFeatures llInner circuit 1) Low on - resistance. 2) Built-in G-S protection diode. 3) Small surface mount package(TSMT8) 4) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K21 llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 45 V DSS Continuous drain current I 4 A D *1 I Pulsed drain current 12 A D,pulse V Gate - Source voltage 20 V GSS total 1.5 *2 P D Power dissipation element 1.25 W *3 P total 0.7 D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20150730 - Rev.001 QS8K21 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 83.3 *2 R thJA Thermal resistance, junction - ambient element - - 100 /W *3 R total - - 178 thJA llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 45 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 46.8 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 45V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -3.9 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 4A - 38 53 GS D Static drain - source *4 R V = 4.5V, I = 4A - 48 67 m DS(on) GS D on - state resistance V = 4V, I = 4A - 53 75 GS D Gate input resistance R f = 1MHz, open drain - 6 - G Forward Transfer *4 Y V = 10V, I = 4A 2 - - S fs DS D Admittance www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2/11 20150730 - Rev.001

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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