Product Information

VO3150A

VO3150A electronic component of Vishay

Datasheet
Logic Output Optocouplers 0.5A Current Out IGBT/MOSFET Drvr

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.207 ea
Line Total: USD 2.21

822 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

VO3150A
Vishay

1 : USD 1.5065
10 : USD 1.1615
100 : USD 1.0235
250 : USD 0.9764
500 : USD 0.8659
1000 : USD 0.7958
2000 : USD 0.7774
4000 : USD 0.7774
10000 : USD 0.7544

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Fall Time
Output Type
Package / Case
Isolation Voltage
Maximum Continuous Output Current
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Propagation Delay - Max
Operating Supply Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Logic Gate Type
Maximum Forward Diode Current
Maximum Forward Diode Voltage
Maximum Reverse Diode Voltage
Minimum Forward Diode Voltage
Number Of Channels Per Chip
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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VO3150A Vishay Semiconductors 0.5 A Output Current IGBT and MOSFET Driver FEATURES 0.5 A minimum peak output current 25 kV/s minimum common mode rejection 1 8 NC V CC (CMR) at V = 1500 V CM 2 7 A V O I = 2.5 mA maximum supply current CC Under voltage lock-out (UVLO) with 3 6 C V O hysteresis 4 5 NC V EE Wide operating V range: 15 V to 32 V CC Shield 20530 1 0.4 s maximum propagation delay V Industrial temperature range: - 40 C to 110 C DE 0.5 V maximum low level output voltage (V ) OL 19813 Compliant to RoHS directive 2002/95/EC DESCRIPTION APPLICATIONS The VO3150A consists of a LED optically coupled to an integrated circuit with a power output stage. This Isolated IGBT/MOSFET gate driver optocoupler is ideally suited for driving power IGBTs and AC and brushless DC motor drives MOSFETs used in motor control inverter applications. The Induction stove top high operating voltage range of the output stage provides Industrial inverters the drive voltages required by gate controlled devices. The voltage and current supplied by this optocoupler makes it Switch mode power supplies (SMPS) ideally suited for directly driving IGBTs with ratings up to 800 Uninterruptible power supplies (UPS) V/20 A. For IGBTs with higher ratings, the VO3150A can be used to drive a discrete power stage which drives the IGBT AGENCY APPROVALS gate. UL - file no. E52744 system code H, double protection cUL - file no. E52744, equivalent to CSA bulletin 5A DIN EN 60747-5-5 (VDE0884) available with option 1 ORDERING INFORMATION DIP-8 Option 7 V O 3 150 A - X 0 0 7 T PART NUMBER PACKAGE OPTION TAPE AND 7.62 mm > 0.7 mm REEL PACKAGE UL, cUL UL, cUL, VDE DIP-8 VO3150A - SMD-8, option 7 VO3150A-X007T VO3150A-X017T TRUTH TABLE V - V V - V CC EE CC EE LED POSITIVE GOING NEGATIVE GOING V O (TURN ON) (TURN OFF) Off 0 V to 32 V 0 V to 32 V Low On 0 V to 11 V 0 V to 9.5 V Low On 11 V to 13.5 V 9.5 V to 12 V Transition On 13.5 V to 32 V 12 V to 32 V High Document Number: 81808 For technical questions, contact: optocoupleranswers vishay.com www.vishay.com Rev. 1.1, 14-Jan-10 1 VO3150A 0.5 A Output Current IGBT and Vishay Semiconductors MOSFET Driver (1) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Input forward current I 25 mA F Peak transient input current < 1 s pulse width, 300 pps I 1A F(TRAN) Reverse input voltage V 5V R Output power dissipation P 45 mW diss OUTPUT (2) High peak output current I 0.5 A OH(PEAK) (2) Low peak output current I 0.5 A OL(PEAK) Supply voltage (V - V )0 to + 35 V CC EE Output voltage V 0 to + V V O(PEAK) CC Output power dissipation P 250 mW diss OPTOCOUPLER Isolation test voltage (between emitter and detector, climate t = 1 s V 5300 V ISO RMS per DIN 500414, part 2, Nov. 74) Storage temperature range T - 55 to + 125 C S Ambient operating temperature range T - 40 to + 110 C amb Total power dissipation P 295 mW tot (3) Lead solder temperature for 10 s, 1.6 mm below seating plane T 260 C sld Notes (1) Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Maximum pulse width = 10 s, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with I peak minimum = 0.5 A. See applications section for additional details on limiting I peak. O OH (3) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). RECOMMENDED OPERATING CONDITION PARAMETER SYMBOL MIN. MAX. UNIT Power supply voltage V - V 15 32 V CC EE Input LED current (on) I 716 mA F Input voltage (off) V - 3 0.8 V F(OFF) Operating temperature T - 40 + 110 C amb www.vishay.com For technical questions, contact: optocoupleranswers vishay.com Document Number: 81808 2 Rev. 1.1, 14-Jan-10

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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